MoS2-Based MOS Capacitor for In-Memory Light Sensing

Dayanand Kumar, Ayman Rezk, Ammar Nayfeh, Nazek Elatab

Research output: Contribution to journalArticlepeer-review


In this work, we investigate solution processable MoS2 based MOS (metal oxide semiconductor) capacitor device for data storage and in-memory light sensing. The MOS capacitor exhibits a good memory window of about 2.5 V with the operating voltage of +6/-6 V and good endurance of 1000 cycles without any degradation. The device shows a good memory window from 0.4 V to 5 V when the operating voltage was varied from 4/-4 to 8/-8. Importantly, the memory window of the device was increased from 2.5 V to more than 5 V when optical light with different wavelengths was induced onto the device. These promising features of the device make it suitable for data storage and in-memory light sensing.
Original languageEnglish (US)
Pages (from-to)187-190
Number of pages4
JournalECS Transactions
Issue number1
StatePublished - May 19 2023

ASJC Scopus subject areas

  • General Engineering


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