MoS₂ surface structure tailoring via carbonaceous promoter

Atomically thin semiconducting transition-metal dichalcogenides have been attracting lots of attentions, particularly, molybdenum disulfide (MoS₂) monolayers show promising applications in field effect transistors, optoelectronics and valleytronics. However, the controlled synthesis of highly crystalline MoS₂ remain a challenge especially the systematic approach to manipulate its structure and morphology. Herein, we report a method for controlled synthesis of highly crystalline MoS₂ by using chemical vapor deposition method with carbonaceous materials as growth promoter. A uniform and highly crystalline MoS₂ monolayer with the grain size close to 40 μm was achieved. Furthermore, we extend the method to the manipulation of MoS₂ morphology, flower-shape vertical grown MoS₂ layers were obtained on growth promoting substrates. This simple approach allows an easy access of highly crystalline MoS₂ layers with morphology tuned in a controllable manner. Moreover, the flower-shape MoS₂ grown on graphene oxide film used as an anode material for lithium-ion batteries showed excellent electrochemical performance.