Multi-Level Nanoimprint Lithography for Large-Area Thin Film Transistor Backplane Manufacturing

Tamer Dogan; Joris de Riet; Thijs Bel; Roy Verbeek; Ilias Katsouras; Eric Meulenkamp; Gerwin Gelinck; Auke Jisk Kronemeijer

doi:10.2494/photopolymer.33.241

Multi-Level Nanoimprint Lithography for Large-Area Thin Film Transistor Backplane Manufacturing

Tamer Dogan, Joris de Riet, Thijs Bel, Roy Verbeek, Ilias Katsouras, Eric Meulenkamp, Gerwin Gelinck, Auke Jisk Kronemeijer

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Thin film transistors (TFTs) are the basis for current AMOLED display arrays. For next- generation displays, higher resolution and cost-effective manufacturing of panels is adamant. The current benchmark patterning method in the display industry is photolithography. Here, we propose the use of a hybrid approach of nanoimprint lithography and conventional FPD processing for the realization of high-resolution display backplanes. We demonstrate the realization of sub-micron amorphous oxide semiconductor TFTs with multi-level nanoimprint lithography in order to decrease the number of patterning steps in display manufacturing. Top-gate self-aligned a-IGZO TFTs are realized with performance comparable to benchmark photolithography-based TFTs.

Original language	English (US)
Pages (from-to)	241-244
Number of pages	4
Journal	Journal of Photopolymer Science and Technology
Volume	33
Issue number	2
DOIs	https://doi.org/10.2494/photopolymer.33.241
State	Published - Jun 30 2020
Externally published	Yes

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10.2494/photopolymer.33.241

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title = "Multi-Level Nanoimprint Lithography for Large-Area Thin Film Transistor Backplane Manufacturing",

abstract = "Thin film transistors (TFTs) are the basis for current AMOLED display arrays. For next- generation displays, higher resolution and cost-effective manufacturing of panels is adamant. The current benchmark patterning method in the display industry is photolithography. Here, we propose the use of a hybrid approach of nanoimprint lithography and conventional FPD processing for the realization of high-resolution display backplanes. We demonstrate the realization of sub-micron amorphous oxide semiconductor TFTs with multi-level nanoimprint lithography in order to decrease the number of patterning steps in display manufacturing. Top-gate self-aligned a-IGZO TFTs are realized with performance comparable to benchmark photolithography-based TFTs.",

author = "Tamer Dogan and {de Riet}, Joris and Thijs Bel and Roy Verbeek and Ilias Katsouras and Eric Meulenkamp and Gerwin Gelinck and {Jisk Kronemeijer}, Auke",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work is financed through the Flexlines project within the Interreg V-programme FlandersThe Netherlands, a cross-border cooperation programme with financial support from the European Regional Development Fund, and co financed by the Province of Noord-Brabant, The Netherlands, and King Abdullah University of Science and Technology (KAUST) OSR-CRF CRG funding. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2020",

month = jun,

day = "30",

doi = "10.2494/photopolymer.33.241",

language = "English (US)",

volume = "33",

pages = "241--244",

journal = "Journal of Photopolymer Science and Technology",

issn = "0914-9244",

publisher = "Tokai University",

number = "2",

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TY - JOUR

T1 - Multi-Level Nanoimprint Lithography for Large-Area Thin Film Transistor Backplane Manufacturing

AU - Dogan, Tamer

AU - de Riet, Joris

AU - Bel, Thijs

AU - Verbeek, Roy

AU - Katsouras, Ilias

AU - Meulenkamp, Eric

AU - Gelinck, Gerwin

AU - Jisk Kronemeijer, Auke

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work is financed through the Flexlines project within the Interreg V-programme FlandersThe Netherlands, a cross-border cooperation programme with financial support from the European Regional Development Fund, and co financed by the Province of Noord-Brabant, The Netherlands, and King Abdullah University of Science and Technology (KAUST) OSR-CRF CRG funding. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2020/6/30

Y1 - 2020/6/30

N2 - Thin film transistors (TFTs) are the basis for current AMOLED display arrays. For next- generation displays, higher resolution and cost-effective manufacturing of panels is adamant. The current benchmark patterning method in the display industry is photolithography. Here, we propose the use of a hybrid approach of nanoimprint lithography and conventional FPD processing for the realization of high-resolution display backplanes. We demonstrate the realization of sub-micron amorphous oxide semiconductor TFTs with multi-level nanoimprint lithography in order to decrease the number of patterning steps in display manufacturing. Top-gate self-aligned a-IGZO TFTs are realized with performance comparable to benchmark photolithography-based TFTs.

AB - Thin film transistors (TFTs) are the basis for current AMOLED display arrays. For next- generation displays, higher resolution and cost-effective manufacturing of panels is adamant. The current benchmark patterning method in the display industry is photolithography. Here, we propose the use of a hybrid approach of nanoimprint lithography and conventional FPD processing for the realization of high-resolution display backplanes. We demonstrate the realization of sub-micron amorphous oxide semiconductor TFTs with multi-level nanoimprint lithography in order to decrease the number of patterning steps in display manufacturing. Top-gate self-aligned a-IGZO TFTs are realized with performance comparable to benchmark photolithography-based TFTs.

UR - http://hdl.handle.net/10754/664010

UR - https://www.jstage.jst.go.jp/article/photopolymer/33/2/33_241/_article

U2 - 10.2494/photopolymer.33.241

DO - 10.2494/photopolymer.33.241

M3 - Article

SN - 0914-9244

VL - 33

SP - 241

EP - 244

JO - Journal of Photopolymer Science and Technology

JF - Journal of Photopolymer Science and Technology

IS - 2

ER -

Multi-Level Nanoimprint Lithography for Large-Area Thin Film Transistor Backplane Manufacturing

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