Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy

Shaik Wasef; Selma Amara; Meshal Alawein; Hossein Fariborzi

doi:10.1109/EDTM.2018.8421415

Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy

Shaik Wasef, Selma Amara, Meshal Alawein, Hossein Fariborzi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work, we report the fabrication and characterization of novel four and six terminal current-driven magnetic memory cells. In particular, we experimentally demonstrate the magnetization switching of triangular and square magnets through spin-orbit torque by in-plane currents in a Pt/Ni₈₁Fe₁₉ (Py) heterostructure. The spin torques, generated by applying a constant current in one of multiple Pt wires, are used to switch a Py film between its multiple stable magnetic states, as quantified by anisotropic magnetoresistance (AMR) and tunnel magnetoresistance (TMR) measurements at room temperature. The observations have also been confirmed by micromagnetic simulations.

Original language	English (US)
Title of host publication	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	298-300
Number of pages	3
ISBN (Print)	9781538637111
DOIs	https://doi.org/10.1109/EDTM.2018.8421415
State	Published - Jul 26 2018
Event	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan Duration: Mar 13 2018 → Mar 16 2018

Publication series

Name	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Conference

Conference	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country/Territory	Japan
City	Kobe
Period	03/13/18 → 03/16/18

Keywords

MTJ
configurational anisotropy
spin orbit torque
spin transfer torque

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Industrial and Manufacturing Engineering

Access to Document

10.1109/EDTM.2018.8421415

Cite this

Wasef, S., Amara, S., Alawein, M., & Fariborzi, H. (2018). Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 298-300). Article 8421415 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421415

Wasef, Shaik ; Amara, Selma ; Alawein, Meshal et al. / Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 298-300 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

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title = "Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy",

abstract = "In this work, we report the fabrication and characterization of novel four and six terminal current-driven magnetic memory cells. In particular, we experimentally demonstrate the magnetization switching of triangular and square magnets through spin-orbit torque by in-plane currents in a Pt/Ni81Fe19 (Py) heterostructure. The spin torques, generated by applying a constant current in one of multiple Pt wires, are used to switch a Py film between its multiple stable magnetic states, as quantified by anisotropic magnetoresistance (AMR) and tunnel magnetoresistance (TMR) measurements at room temperature. The observations have also been confirmed by micromagnetic simulations.",

keywords = "MTJ, configurational anisotropy, spin orbit torque, spin transfer torque",

author = "Shaik Wasef and Selma Amara and Meshal Alawein and Hossein Fariborzi",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

year = "2018",

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day = "26",

doi = "10.1109/EDTM.2018.8421415",

language = "English (US)",

isbn = "9781538637111",

series = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Wasef, S, Amara, S, Alawein, M & Fariborzi, H 2018, Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421415, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 298-300, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 03/13/18. https://doi.org/10.1109/EDTM.2018.8421415

Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy. / Wasef, Shaik; Amara, Selma; Alawein, Meshal et al.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 298-300 8421415 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy

AU - Wasef, Shaik

AU - Amara, Selma

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AU - Fariborzi, Hossein

PY - 2018/7/26

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N2 - In this work, we report the fabrication and characterization of novel four and six terminal current-driven magnetic memory cells. In particular, we experimentally demonstrate the magnetization switching of triangular and square magnets through spin-orbit torque by in-plane currents in a Pt/Ni81Fe19 (Py) heterostructure. The spin torques, generated by applying a constant current in one of multiple Pt wires, are used to switch a Py film between its multiple stable magnetic states, as quantified by anisotropic magnetoresistance (AMR) and tunnel magnetoresistance (TMR) measurements at room temperature. The observations have also been confirmed by micromagnetic simulations.

AB - In this work, we report the fabrication and characterization of novel four and six terminal current-driven magnetic memory cells. In particular, we experimentally demonstrate the magnetization switching of triangular and square magnets through spin-orbit torque by in-plane currents in a Pt/Ni81Fe19 (Py) heterostructure. The spin torques, generated by applying a constant current in one of multiple Pt wires, are used to switch a Py film between its multiple stable magnetic states, as quantified by anisotropic magnetoresistance (AMR) and tunnel magnetoresistance (TMR) measurements at room temperature. The observations have also been confirmed by micromagnetic simulations.

KW - MTJ

KW - configurational anisotropy

KW - spin orbit torque

KW - spin transfer torque

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BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

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Wasef S, Amara S, Alawein M, Fariborzi H. Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 298-300. 8421415. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421415

Multibit Memory Cells Based on Spin-Orbit Torque Driven Magnetization Switching of Nanomagnets with Configurational Anisotropy

Abstract

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Keywords

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