Multiple quantum wells GaInNAs for ridge-wave-guide laser diodes

Nor Azlian Abdul Manaf; Mohd Sharizal Alias; Sufian Mousa Mitani; Mohamed Razman Yahya

doi:10.1109/IEMT.2010.5746766

Multiple quantum wells GaInNAs for ridge-wave-guide laser diodes

Nor Azlian Abdul Manaf, Mohd Sharizal Alias, Sufian Mousa Mitani, Mohamed Razman Yahya

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The high demand for long wavelength lasers has led to the investigation of GaInNAs material. GaInNAs multiple-quantum-wells (MQWs) with different QW numbers have been studied for ridge waveguide (RWG) lasers. The emission wavelengths of the lasers are in the range of 1310 nm. Significant improvements of emission wavelength and output power were demonstrated with increasing QW numbers. We believed that that the number of QWs used in the devices is limited by the crystalline quality of the GaInNAs material. The emission wavelength is much more improved by increment of QW numbers. A smaller QW numbers are suitable for lower threshold current and higher differential quantum efficiency while a larger QW numbers can achieve a less output power. The higher threshold current is due to the approximately saturated threshold current density and the increments of the active volume. Further comparisons on the devices performance with variation of QW numbers will be report.

Original language	English (US)
Title of host publication	Proceedings of the 34th International Electronics Manufacturing Technology Conference, IEMT 2010
DOIs	https://doi.org/10.1109/IEMT.2010.5746766
State	Published - 2010
Externally published	Yes
Event	34th International Electronics Manufacturing Technology Conference, IEMT 2010 - Melaka, Malaysia Duration: Nov 30 2010 → Dec 2 2010

Other

Other	34th International Electronics Manufacturing Technology Conference, IEMT 2010
Country/Territory	Malaysia
City	Melaka
Period	11/30/10 → 12/2/10

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering

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10.1109/IEMT.2010.5746766

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@inproceedings{bc47368eabb54ab4b00aa0b57a38d967,

title = "Multiple quantum wells GaInNAs for ridge-wave-guide laser diodes",

abstract = "The high demand for long wavelength lasers has led to the investigation of GaInNAs material. GaInNAs multiple-quantum-wells (MQWs) with different QW numbers have been studied for ridge waveguide (RWG) lasers. The emission wavelengths of the lasers are in the range of 1310 nm. Significant improvements of emission wavelength and output power were demonstrated with increasing QW numbers. We believed that that the number of QWs used in the devices is limited by the crystalline quality of the GaInNAs material. The emission wavelength is much more improved by increment of QW numbers. A smaller QW numbers are suitable for lower threshold current and higher differential quantum efficiency while a larger QW numbers can achieve a less output power. The higher threshold current is due to the approximately saturated threshold current density and the increments of the active volume. Further comparisons on the devices performance with variation of QW numbers will be report.",

author = "{Abdul Manaf}, {Nor Azlian} and Alias, {Mohd Sharizal} and Mitani, {Sufian Mousa} and Yahya, {Mohamed Razman}",

year = "2010",

doi = "10.1109/IEMT.2010.5746766",

language = "English (US)",

isbn = "9781424488278",

booktitle = "Proceedings of the 34th International Electronics Manufacturing Technology Conference, IEMT 2010",

note = "34th International Electronics Manufacturing Technology Conference, IEMT 2010 ; Conference date: 30-11-2010 Through 02-12-2010",

}

Abdul Manaf, NA, Alias, MS, Mitani, SM & Yahya, MR 2010, Multiple quantum wells GaInNAs for ridge-wave-guide laser diodes. in Proceedings of the 34th International Electronics Manufacturing Technology Conference, IEMT 2010., 5746766, 34th International Electronics Manufacturing Technology Conference, IEMT 2010, Melaka, Malaysia, 11/30/10. https://doi.org/10.1109/IEMT.2010.5746766

TY - GEN

T1 - Multiple quantum wells GaInNAs for ridge-wave-guide laser diodes

AU - Abdul Manaf, Nor Azlian

AU - Alias, Mohd Sharizal

AU - Mitani, Sufian Mousa

AU - Yahya, Mohamed Razman

PY - 2010

Y1 - 2010

N2 - The high demand for long wavelength lasers has led to the investigation of GaInNAs material. GaInNAs multiple-quantum-wells (MQWs) with different QW numbers have been studied for ridge waveguide (RWG) lasers. The emission wavelengths of the lasers are in the range of 1310 nm. Significant improvements of emission wavelength and output power were demonstrated with increasing QW numbers. We believed that that the number of QWs used in the devices is limited by the crystalline quality of the GaInNAs material. The emission wavelength is much more improved by increment of QW numbers. A smaller QW numbers are suitable for lower threshold current and higher differential quantum efficiency while a larger QW numbers can achieve a less output power. The higher threshold current is due to the approximately saturated threshold current density and the increments of the active volume. Further comparisons on the devices performance with variation of QW numbers will be report.

AB - The high demand for long wavelength lasers has led to the investigation of GaInNAs material. GaInNAs multiple-quantum-wells (MQWs) with different QW numbers have been studied for ridge waveguide (RWG) lasers. The emission wavelengths of the lasers are in the range of 1310 nm. Significant improvements of emission wavelength and output power were demonstrated with increasing QW numbers. We believed that that the number of QWs used in the devices is limited by the crystalline quality of the GaInNAs material. The emission wavelength is much more improved by increment of QW numbers. A smaller QW numbers are suitable for lower threshold current and higher differential quantum efficiency while a larger QW numbers can achieve a less output power. The higher threshold current is due to the approximately saturated threshold current density and the increments of the active volume. Further comparisons on the devices performance with variation of QW numbers will be report.

UR - http://www.scopus.com/inward/record.url?scp=79955772864&partnerID=8YFLogxK

U2 - 10.1109/IEMT.2010.5746766

DO - 10.1109/IEMT.2010.5746766

M3 - Conference contribution

AN - SCOPUS:79955772864

SN - 9781424488278

BT - Proceedings of the 34th International Electronics Manufacturing Technology Conference, IEMT 2010

T2 - 34th International Electronics Manufacturing Technology Conference, IEMT 2010

Y2 - 30 November 2010 through 2 December 2010

ER -

Multiple quantum wells GaInNAs for ridge-wave-guide laser diodes

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