Abstract
The high demand for long wavelength lasers has led to the investigation of GaInNAs material. GaInNAs multiple-quantum-wells (MQWs) with different QW numbers have been studied for ridge waveguide (RWG) lasers. The emission wavelengths of the lasers are in the range of 1310 nm. Significant improvements of emission wavelength and output power were demonstrated with increasing QW numbers. We believed that that the number of QWs used in the devices is limited by the crystalline quality of the GaInNAs material. The emission wavelength is much more improved by increment of QW numbers. A smaller QW numbers are suitable for lower threshold current and higher differential quantum efficiency while a larger QW numbers can achieve a less output power. The higher threshold current is due to the approximately saturated threshold current density and the increments of the active volume. Further comparisons on the devices performance with variation of QW numbers will be report.
Original language | English (US) |
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Title of host publication | Proceedings of the 34th International Electronics Manufacturing Technology Conference, IEMT 2010 |
DOIs | |
State | Published - 2010 |
Externally published | Yes |
Event | 34th International Electronics Manufacturing Technology Conference, IEMT 2010 - Melaka, Malaysia Duration: Nov 30 2010 → Dec 2 2010 |
Other
Other | 34th International Electronics Manufacturing Technology Conference, IEMT 2010 |
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Country/Territory | Malaysia |
City | Melaka |
Period | 11/30/10 → 12/2/10 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering