Abstract
In this paper, we present the characteristics of a quantum-well intermixing technique using pulsed-photoabsorption-induced disordering. Photoluminescence, micro-Raman spectroscopy, and transmission electron microscopy were used to characterize the process. Using this technique, a differential wavelength shift between the intermixed and nonintermixed regions of over 160 nm has been observed from InGaAs-InGaAsP heterostructures. It was found from the micro-Raman measurements that a spatial resolution of better than 2.5 μm can be achieved. A theoretical model has been developed to estimate the spatial resolution limit. Theoretical analysis has also been performed to investigate the effect of laser irradiation on the degree of intermixing in InGaAs-InGaAsP structures. To verify the capability of this process in monolithic photonic integration, high-quality bandgap tuned lasers, two-section extended cavity lasers, and multiple-wavelength laser chips have been fabricated.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 481-490 |
| Number of pages | 10 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 40 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 2004 |
| Externally published | Yes |
Keywords
- InGaAs-InGaAsP
- Monolithic integration
- Photonic integrated circuits
- Pulsed laser irradiation
- Quantum-well intermixing
- Quantum-well laser
ASJC Scopus subject areas
- Condensed Matter Physics
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering