N-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection

D. S. Tasi; C. F. Kang; H. H. Wang; C. A. Lin; J. J. Ke; Y. H. Chu; J. H. He

doi:10.1364/OL.37.001112

N-ZnO/LaAlO₃/p-Si heterojunction for visible-blind UV detection

D. S. Tasi, C. F. Kang, H. H. Wang, C. A. Lin, J. J. Ke, Y. H. Chu, J. H. He^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO₃(LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO/LAO/p-Si PDs due to the high potential barrier between LAO and p-Si layers (∼2.0 eV). These results support the use of n-ZnO/LAO/p-Si PDs in the visible-blind UV PDs in a visible-light environment.

Original language	English (US)
Pages (from-to)	1112-1114
Number of pages	3
Journal	OPTICS LETTERS
Volume	37
Issue number	6
DOIs	https://doi.org/10.1364/OL.37.001112
State	Published - Mar 15 2012
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "N-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection",

abstract = "A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO3(LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO/LAO/p-Si PDs due to the high potential barrier between LAO and p-Si layers (∼2.0 eV). These results support the use of n-ZnO/LAO/p-Si PDs in the visible-blind UV PDs in a visible-light environment.",

author = "Tasi, {D. S.} and Kang, {C. F.} and Wang, {H. H.} and Lin, {C. A.} and Ke, {J. J.} and Chu, {Y. H.} and He, {J. H.}",

year = "2012",

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doi = "10.1364/OL.37.001112",

language = "English (US)",

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TY - JOUR

T1 - N-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection

AU - Tasi, D. S.

AU - Kang, C. F.

AU - Wang, H. H.

AU - Lin, C. A.

AU - Ke, J. J.

AU - Chu, Y. H.

AU - He, J. H.

PY - 2012/3/15

Y1 - 2012/3/15

N2 - A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO3(LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO/LAO/p-Si PDs due to the high potential barrier between LAO and p-Si layers (∼2.0 eV). These results support the use of n-ZnO/LAO/p-Si PDs in the visible-blind UV PDs in a visible-light environment.

AB - A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO3(LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO/LAO/p-Si PDs due to the high potential barrier between LAO and p-Si layers (∼2.0 eV). These results support the use of n-ZnO/LAO/p-Si PDs in the visible-blind UV PDs in a visible-light environment.

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U2 - 10.1364/OL.37.001112

DO - 10.1364/OL.37.001112

M3 - Article

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AN - SCOPUS:84863375292

SN - 0146-9592

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EP - 1114

JO - OPTICS LETTERS

JF - OPTICS LETTERS

IS - 6

ER -

N-ZnO/LaAlO₃/p-Si heterojunction for visible-blind UV detection

Abstract

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