Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications

Wei Cheng Lien; Dung Sheng Tsai; Shu Hsien Chiu; Debbie G. Senesky; Roya Maboudian; Albert P. Pisano; Jr Hau He

doi:10.1109/TRANSDUCERS.2011.5969795

Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications

Wei Cheng Lien^*, Dung Sheng Tsai, Shu Hsien Chiu, Debbie G. Senesky, Roya Maboudian, Albert P. Pisano, Jr Hau He

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

This work demonstrates a method to develop high temperature metal-semiconductor-metal photodetectors using low-temperature, ion beam assisted deposition of nanocrystalline silicon carbide (SiC) and hydrothermal synthesis of zinc oxide (ZnO) nanorod arrays. Due to incorporation of ZnO nanorod arrays, the photo-to-dark current ratio of Au/nanocrystalline SiC is increased from 4.9 to 13.3 at 25°C and from 4.85 to 7.57 at 200°C. The results, suggest that the ZnO nanorod arrays could serve as an antireflection layers to guide more light into the SiC photodetectors. These preliminary results support the integration of nanocrystalline SiC and ZnO nanorod arrays for use in high temperature photo-detection applications.

Original language	English (US)
Title of host publication	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages	1875-1878
Number of pages	4
DOIs	https://doi.org/10.1109/TRANSDUCERS.2011.5969795
State	Published - 2011
Externally published	Yes
Event	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China Duration: Jun 5 2011 → Jun 9 2011

Publication series

Name	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Other

Other	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Country/Territory	China
City	Beijing
Period	06/5/11 → 06/9/11

Keywords

Nanocrystalline SiC
ZnO nanorods
antireflection
high-temperature photodetector

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/TRANSDUCERS.2011.5969795

Cite this

Lien, W. C., Tsai, D. S., Chiu, S. H., Senesky, D. G., Maboudian, R., Pisano, A. P., & He, J. H. (2011). Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (pp. 1875-1878). Article 5969795 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). https://doi.org/10.1109/TRANSDUCERS.2011.5969795

Lien, Wei Cheng ; Tsai, Dung Sheng ; Chiu, Shu Hsien et al. / Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications. 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. pp. 1875-1878 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

@inproceedings{9cfe0663b2304358a2cfc7437b6c574c,

title = "Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications",

abstract = "This work demonstrates a method to develop high temperature metal-semiconductor-metal photodetectors using low-temperature, ion beam assisted deposition of nanocrystalline silicon carbide (SiC) and hydrothermal synthesis of zinc oxide (ZnO) nanorod arrays. Due to incorporation of ZnO nanorod arrays, the photo-to-dark current ratio of Au/nanocrystalline SiC is increased from 4.9 to 13.3 at 25°C and from 4.85 to 7.57 at 200°C. The results, suggest that the ZnO nanorod arrays could serve as an antireflection layers to guide more light into the SiC photodetectors. These preliminary results support the integration of nanocrystalline SiC and ZnO nanorod arrays for use in high temperature photo-detection applications.",

keywords = "Nanocrystalline SiC, ZnO nanorods, antireflection, high-temperature photodetector",

author = "Lien, {Wei Cheng} and Tsai, {Dung Sheng} and Chiu, {Shu Hsien} and Senesky, {Debbie G.} and Roya Maboudian and Pisano, {Albert P.} and He, {Jr Hau}",

year = "2011",

doi = "10.1109/TRANSDUCERS.2011.5969795",

language = "English (US)",

isbn = "9781457701573",

series = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

pages = "1875--1878",

booktitle = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

note = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 ; Conference date: 05-06-2011 Through 09-06-2011",

}

Lien, WC, Tsai, DS, Chiu, SH, Senesky, DG, Maboudian, R, Pisano, AP & He, JH 2011, Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications. in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969795, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, pp. 1875-1878, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, Beijing, China, 06/5/11. https://doi.org/10.1109/TRANSDUCERS.2011.5969795

Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications. / Lien, Wei Cheng; Tsai, Dung Sheng; Chiu, Shu Hsien et al.
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 1875-1878 5969795 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications

AU - Lien, Wei Cheng

AU - Tsai, Dung Sheng

AU - Chiu, Shu Hsien

AU - Senesky, Debbie G.

AU - Maboudian, Roya

AU - Pisano, Albert P.

AU - He, Jr Hau

PY - 2011

Y1 - 2011

N2 - This work demonstrates a method to develop high temperature metal-semiconductor-metal photodetectors using low-temperature, ion beam assisted deposition of nanocrystalline silicon carbide (SiC) and hydrothermal synthesis of zinc oxide (ZnO) nanorod arrays. Due to incorporation of ZnO nanorod arrays, the photo-to-dark current ratio of Au/nanocrystalline SiC is increased from 4.9 to 13.3 at 25°C and from 4.85 to 7.57 at 200°C. The results, suggest that the ZnO nanorod arrays could serve as an antireflection layers to guide more light into the SiC photodetectors. These preliminary results support the integration of nanocrystalline SiC and ZnO nanorod arrays for use in high temperature photo-detection applications.

AB - This work demonstrates a method to develop high temperature metal-semiconductor-metal photodetectors using low-temperature, ion beam assisted deposition of nanocrystalline silicon carbide (SiC) and hydrothermal synthesis of zinc oxide (ZnO) nanorod arrays. Due to incorporation of ZnO nanorod arrays, the photo-to-dark current ratio of Au/nanocrystalline SiC is increased from 4.9 to 13.3 at 25°C and from 4.85 to 7.57 at 200°C. The results, suggest that the ZnO nanorod arrays could serve as an antireflection layers to guide more light into the SiC photodetectors. These preliminary results support the integration of nanocrystalline SiC and ZnO nanorod arrays for use in high temperature photo-detection applications.

KW - Nanocrystalline SiC

KW - ZnO nanorods

KW - antireflection

KW - high-temperature photodetector

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U2 - 10.1109/TRANSDUCERS.2011.5969795

DO - 10.1109/TRANSDUCERS.2011.5969795

M3 - Conference contribution

AN - SCOPUS:80052127831

SN - 9781457701573

T3 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

SP - 1875

EP - 1878

BT - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

T2 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Y2 - 5 June 2011 through 9 June 2011

ER -

Lien WC, Tsai DS, Chiu SH, Senesky DG, Maboudian R, Pisano AP et al. Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 1875-1878. 5969795. (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). doi: 10.1109/TRANSDUCERS.2011.5969795

Nanocrystalline SiC metal-semiconductor-metal photodetector with ZnO nanorod arrays for high-temperature applications

Abstract

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