Abstract
Nanometer scale spintronics for data storage applications in both hard disk drive and non-volatile memory are introduced. For the hard disk drive applications, we have developed all-metal GMR sensors with an MR of 18%. A reader with a track width of 109nm is also fabricated. Linear and noise-free output signal has been achieved. For non-volatile memory applications, an MTJ MRAM with switch-free, two-line structure and a peripheral circuitry is presented. The shunting effect has been effectively reduced in this structure; the signal is maintained at original level even without the requirement of a transistor or a diode. The additional digital line to write the cell is removed without affecting the writing performance.
| Original language | English (US) |
|---|---|
| Title of host publication | 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 |
| Editors | R. Huang, M. Yu, J.J. Liou, T. Hiramito, C. Claeys |
| Pages | 752-755 |
| Number of pages | 4 |
| Volume | 1 |
| State | Published - 2004 |
| Externally published | Yes |
| Event | 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China Duration: Oct 18 2004 → Oct 21 2004 |
Other
| Other | 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 |
|---|---|
| Country/Territory | China |
| City | Beijing |
| Period | 10/18/04 → 10/21/04 |
ASJC Scopus subject areas
- Engineering(all)