Nanoporous AlGaN Distributed Bragg Reflectors for Deep Ultraviolet Emission

Maocheng Shan; Chenyu Guo; Yongming Zhao; Qiushuang Chen; Liqiong Deng; Zhihua Zheng; Shizhou Tan; Wei Guo; Jiangnan Dai; Feng Wu; Xiaohang Li; Changqing Chen

doi:10.1021/acsanm.2c02689

Nanoporous AlGaN Distributed Bragg Reflectors for Deep Ultraviolet Emission

Maocheng Shan, Chenyu Guo, Yongming Zhao, Qiushuang Chen, Liqiong Deng, Zhihua Zheng, Shizhou Tan, Wei Guo, Jiangnan Dai, Feng Wu^*, Xiaohang Li^*, Changqing Chen^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

In this paper, we demonstrated wafer-scale AlGaN-based deep ultraviolet (DUV) nanoporous (NP) distributed Bragg reflectors (DBRs) by vertical electrochemical (EC) etching. The stopbands of the NP-DBRs were centered around 280 nm with reflectance close to 90%. A thick AlGaN film and four-period multiple quantum wells (MQWs) were grown on the strain-relaxed NP-DBRs template. The reciprocal space mappings (RSMs) revealed the increased compressive strain in MQWs grown on NP-DBRs, and transverse electric (TE) mode emission was enhanced due to this strain modulation. Thanks to the reflection effect, the photoluminescence (PL) intensity of the MQWs in the NP-DBR region was more than twice that of the region without NP-DBRs. The anisotropic optical polarization measurements and theoretical simulations demonstrated that the light extraction of both TE and transverse magnetic (TM) modes were improved by reflection, and the sideward light can be deflected upward by scattering by the etched nanovoids. Especially, the TM mode light was more extracted by NP-DBRs. Our work highlighted the possible applications enabled by the DUV NP-DBRs in light reflection and structural reconstructions of AlGaN-based UV emitters.

Original language	English (US)
Pages (from-to)	10081-10089
Number of pages	9
Journal	ACS Applied Nano Materials
Volume	5
Issue number	7
DOIs	https://doi.org/10.1021/acsanm.2c02689
State	Published - Jul 22 2022

Keywords

deep ultraviolet
distributed Bragg reflectors
electrochemical etching
light extraction
nanoporous AlGaN
TE and TM modes

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1021/acsanm.2c02689

Cite this

@article{028ad4f447584d18970bb3c57488a862,

title = "Nanoporous AlGaN Distributed Bragg Reflectors for Deep Ultraviolet Emission",

abstract = "In this paper, we demonstrated wafer-scale AlGaN-based deep ultraviolet (DUV) nanoporous (NP) distributed Bragg reflectors (DBRs) by vertical electrochemical (EC) etching. The stopbands of the NP-DBRs were centered around 280 nm with reflectance close to 90%. A thick AlGaN film and four-period multiple quantum wells (MQWs) were grown on the strain-relaxed NP-DBRs template. The reciprocal space mappings (RSMs) revealed the increased compressive strain in MQWs grown on NP-DBRs, and transverse electric (TE) mode emission was enhanced due to this strain modulation. Thanks to the reflection effect, the photoluminescence (PL) intensity of the MQWs in the NP-DBR region was more than twice that of the region without NP-DBRs. The anisotropic optical polarization measurements and theoretical simulations demonstrated that the light extraction of both TE and transverse magnetic (TM) modes were improved by reflection, and the sideward light can be deflected upward by scattering by the etched nanovoids. Especially, the TM mode light was more extracted by NP-DBRs. Our work highlighted the possible applications enabled by the DUV NP-DBRs in light reflection and structural reconstructions of AlGaN-based UV emitters.",

keywords = "deep ultraviolet, distributed Bragg reflectors, electrochemical etching, light extraction, nanoporous AlGaN, TE and TM modes",

author = "Maocheng Shan and Chenyu Guo and Yongming Zhao and Qiushuang Chen and Liqiong Deng and Zhihua Zheng and Shizhou Tan and Wei Guo and Jiangnan Dai and Feng Wu and Xiaohang Li and Changqing Chen",

note = "Publisher Copyright: {\textcopyright} 2022 American Chemical Society.",

year = "2022",

month = jul,

day = "22",

doi = "10.1021/acsanm.2c02689",

language = "English (US)",

volume = "5",

pages = "10081--10089",

journal = "ACS Applied Nano Materials",

issn = "2574-0970",

publisher = "American Chemical Society",

number = "7",

}

TY - JOUR

T1 - Nanoporous AlGaN Distributed Bragg Reflectors for Deep Ultraviolet Emission

AU - Shan, Maocheng

AU - Guo, Chenyu

AU - Zhao, Yongming

AU - Chen, Qiushuang

AU - Deng, Liqiong

AU - Zheng, Zhihua

AU - Tan, Shizhou

AU - Guo, Wei

AU - Dai, Jiangnan

AU - Wu, Feng

AU - Li, Xiaohang

AU - Chen, Changqing

PY - 2022/7/22

Y1 - 2022/7/22

N2 - In this paper, we demonstrated wafer-scale AlGaN-based deep ultraviolet (DUV) nanoporous (NP) distributed Bragg reflectors (DBRs) by vertical electrochemical (EC) etching. The stopbands of the NP-DBRs were centered around 280 nm with reflectance close to 90%. A thick AlGaN film and four-period multiple quantum wells (MQWs) were grown on the strain-relaxed NP-DBRs template. The reciprocal space mappings (RSMs) revealed the increased compressive strain in MQWs grown on NP-DBRs, and transverse electric (TE) mode emission was enhanced due to this strain modulation. Thanks to the reflection effect, the photoluminescence (PL) intensity of the MQWs in the NP-DBR region was more than twice that of the region without NP-DBRs. The anisotropic optical polarization measurements and theoretical simulations demonstrated that the light extraction of both TE and transverse magnetic (TM) modes were improved by reflection, and the sideward light can be deflected upward by scattering by the etched nanovoids. Especially, the TM mode light was more extracted by NP-DBRs. Our work highlighted the possible applications enabled by the DUV NP-DBRs in light reflection and structural reconstructions of AlGaN-based UV emitters.

AB - In this paper, we demonstrated wafer-scale AlGaN-based deep ultraviolet (DUV) nanoporous (NP) distributed Bragg reflectors (DBRs) by vertical electrochemical (EC) etching. The stopbands of the NP-DBRs were centered around 280 nm with reflectance close to 90%. A thick AlGaN film and four-period multiple quantum wells (MQWs) were grown on the strain-relaxed NP-DBRs template. The reciprocal space mappings (RSMs) revealed the increased compressive strain in MQWs grown on NP-DBRs, and transverse electric (TE) mode emission was enhanced due to this strain modulation. Thanks to the reflection effect, the photoluminescence (PL) intensity of the MQWs in the NP-DBR region was more than twice that of the region without NP-DBRs. The anisotropic optical polarization measurements and theoretical simulations demonstrated that the light extraction of both TE and transverse magnetic (TM) modes were improved by reflection, and the sideward light can be deflected upward by scattering by the etched nanovoids. Especially, the TM mode light was more extracted by NP-DBRs. Our work highlighted the possible applications enabled by the DUV NP-DBRs in light reflection and structural reconstructions of AlGaN-based UV emitters.

KW - deep ultraviolet

KW - distributed Bragg reflectors

KW - electrochemical etching

KW - light extraction

KW - nanoporous AlGaN

KW - TE and TM modes

UR - http://www.scopus.com/inward/record.url?scp=85135896877&partnerID=8YFLogxK

U2 - 10.1021/acsanm.2c02689

DO - 10.1021/acsanm.2c02689

M3 - Article

AN - SCOPUS:85135896877

SN - 2574-0970

VL - 5

SP - 10081

EP - 10089

JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

IS - 7

ER -

Nanoporous AlGaN Distributed Bragg Reflectors for Deep Ultraviolet Emission

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this