Nanoporous GaN/n-type GaN: a cathode structure for ITO-free perovskite solar cells

Kwangjae Lee; Jung-Wook Min; Bekir Turedi; Abdullah Yousef Alsalloum; Jung-Hong Min; Yeong Jae Kim; Young Jin Yoo; Semi Oh; Namchul Cho; Ram Chandra Subedi; Somak Mitra; Sang Eun Yoon; Jong Hyun Kim; Kwangwook Park; Tae-Hoon Chung; Sung Hoon Jung; Jong-Hyeob Baek; Young Min Song; Iman S. Roqan; Tien Khee Ng; Boon S. Ooi; Osman Bakr

doi:10.1021/acsenergylett.0c01621

Nanoporous GaN/n-type GaN: a cathode structure for ITO-free perovskite solar cells

Kwangjae Lee, Jung-Wook Min, Bekir Turedi, Abdullah Yousef Alsalloum, Jung-Hong Min, Yeong Jae Kim, Young Jin Yoo, Semi Oh, Namchul Cho, Ram Chandra Subedi, Somak Mitra, Sang Eun Yoon, Jong Hyun Kim, Kwangwook Park, Tae-Hoon Chung, Sung Hoon Jung, Jong-Hyeob Baek, Young Min Song, Iman S. Roqan, Tien Khee NgBoon S. Ooi, Osman Bakr

Research output: Contribution to journal › Article › peer-review

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Abstract

Introducing suitable electron/hole transport layers and transparent conductive layers (TCLs) into perovskite solar cells (PSCs) is key to enhancing the selective extraction of charge carriers and reducing surface recombination losses. Here, we introduce nanoporous gallium nitride (NP GaN)/n-type GaN (n-GaN) as a dual-function cathode structure for PSCs, acting as both the TCL and the electron transport layer (ETL). We demonstrate that the hierarchical NP GaN structure provides an expanded interfacial contact area with the perovskite absorber, while the n-GaN under the NP GaN displays high transmittance in the visible spectrum as well as higher lateral electric conductivity than that of a conventional ITO film. Prototype MAPbI3 PSCs based on this NP GaN/n-GaN cathode structure (without an extra ETL) show a power conversion efficiency of up to 18.79%. The NP GaN/n-GaN platform demonstrated herein paves the way for PSCs to take advantage of the widely available heterostructures of mature III-nitride-based technologies.

Original language	English (US)
Journal	ACS Energy Letters
DOIs	https://doi.org/10.1021/acsenergylett.0c01621
State	Published - Sep 17 2020

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10.1021/acsenergylett.0c01621

https://repository.kaust.edu.sa/bitstream/10754/665346/1/Nano_nanoporous.pdf

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Lee, K., Min, J.-W., Turedi, B., Alsalloum, A. Y., Min, J.-H., Kim, Y. J., Yoo, Y. J., Oh, S., Cho, N., Subedi, R. C., Mitra, S., Yoon, S. E., Kim, J. H., Park, K., Chung, T.-H., Jung, S. H., Baek, J.-H., Song, Y. M., Roqan, I. S., ... Bakr, O. (2020). Nanoporous GaN/n-type GaN: a cathode structure for ITO-free perovskite solar cells. ACS Energy Letters. https://doi.org/10.1021/acsenergylett.0c01621

@article{99f4c18536a740dc99d18fe026237195,

title = "Nanoporous GaN/n-type GaN: a cathode structure for ITO-free perovskite solar cells",

abstract = "Introducing suitable electron/hole transport layers and transparent conductive layers (TCLs) into perovskite solar cells (PSCs) is key to enhancing the selective extraction of charge carriers and reducing surface recombination losses. Here, we introduce nanoporous gallium nitride (NP GaN)/n-type GaN (n-GaN) as a dual-function cathode structure for PSCs, acting as both the TCL and the electron transport layer (ETL). We demonstrate that the hierarchical NP GaN structure provides an expanded interfacial contact area with the perovskite absorber, while the n-GaN under the NP GaN displays high transmittance in the visible spectrum as well as higher lateral electric conductivity than that of a conventional ITO film. Prototype MAPbI3 PSCs based on this NP GaN/n-GaN cathode structure (without an extra ETL) show a power conversion efficiency of up to 18.79%. The NP GaN/n-GaN platform demonstrated herein paves the way for PSCs to take advantage of the widely available heterostructures of mature III-nitride-based technologies.",

author = "Kwangjae Lee and Jung-Wook Min and Bekir Turedi and Alsalloum, {Abdullah Yousef} and Jung-Hong Min and Kim, {Yeong Jae} and Yoo, {Young Jin} and Semi Oh and Namchul Cho and Subedi, {Ram Chandra} and Somak Mitra and Yoon, {Sang Eun} and Kim, {Jong Hyun} and Kwangwook Park and Tae-Hoon Chung and Jung, {Sung Hoon} and Jong-Hyeob Baek and Song, {Young Min} and Roqan, {Iman S.} and Ng, {Tien Khee} and Ooi, {Boon S.} and Osman Bakr",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors gratefully acknowledge the financial support provided by King Abdullah University of Science and Technology (KAUST).",

year = "2020",

month = sep,

day = "17",

doi = "10.1021/acsenergylett.0c01621",

language = "English (US)",

journal = "ACS Energy Letters",

issn = "2380-8195",

publisher = "AMER CHEMICAL SOC",

}

Lee, K, Min, J-W, Turedi, B, Alsalloum, AY, Min, J-H, Kim, YJ, Yoo, YJ, Oh, S, Cho, N, Subedi, RC, Mitra, S, Yoon, SE, Kim, JH, Park, K, Chung, T-H, Jung, SH, Baek, J-H, Song, YM, Roqan, IS, Ng, TK, Ooi, BS & Bakr, O 2020, 'Nanoporous GaN/n-type GaN: a cathode structure for ITO-free perovskite solar cells', ACS Energy Letters. https://doi.org/10.1021/acsenergylett.0c01621

TY - JOUR

T1 - Nanoporous GaN/n-type GaN: a cathode structure for ITO-free perovskite solar cells

AU - Lee, Kwangjae

AU - Min, Jung-Wook

AU - Turedi, Bekir

AU - Alsalloum, Abdullah Yousef

AU - Min, Jung-Hong

AU - Kim, Yeong Jae

AU - Yoo, Young Jin

AU - Oh, Semi

AU - Cho, Namchul

AU - Subedi, Ram Chandra

AU - Mitra, Somak

AU - Yoon, Sang Eun

AU - Kim, Jong Hyun

AU - Park, Kwangwook

AU - Chung, Tae-Hoon

AU - Jung, Sung Hoon

AU - Baek, Jong-Hyeob

AU - Song, Young Min

AU - Roqan, Iman S.

AU - Ng, Tien Khee

AU - Ooi, Boon S.

AU - Bakr, Osman

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors gratefully acknowledge the financial support provided by King Abdullah University of Science and Technology (KAUST).

PY - 2020/9/17

Y1 - 2020/9/17

N2 - Introducing suitable electron/hole transport layers and transparent conductive layers (TCLs) into perovskite solar cells (PSCs) is key to enhancing the selective extraction of charge carriers and reducing surface recombination losses. Here, we introduce nanoporous gallium nitride (NP GaN)/n-type GaN (n-GaN) as a dual-function cathode structure for PSCs, acting as both the TCL and the electron transport layer (ETL). We demonstrate that the hierarchical NP GaN structure provides an expanded interfacial contact area with the perovskite absorber, while the n-GaN under the NP GaN displays high transmittance in the visible spectrum as well as higher lateral electric conductivity than that of a conventional ITO film. Prototype MAPbI3 PSCs based on this NP GaN/n-GaN cathode structure (without an extra ETL) show a power conversion efficiency of up to 18.79%. The NP GaN/n-GaN platform demonstrated herein paves the way for PSCs to take advantage of the widely available heterostructures of mature III-nitride-based technologies.

AB - Introducing suitable electron/hole transport layers and transparent conductive layers (TCLs) into perovskite solar cells (PSCs) is key to enhancing the selective extraction of charge carriers and reducing surface recombination losses. Here, we introduce nanoporous gallium nitride (NP GaN)/n-type GaN (n-GaN) as a dual-function cathode structure for PSCs, acting as both the TCL and the electron transport layer (ETL). We demonstrate that the hierarchical NP GaN structure provides an expanded interfacial contact area with the perovskite absorber, while the n-GaN under the NP GaN displays high transmittance in the visible spectrum as well as higher lateral electric conductivity than that of a conventional ITO film. Prototype MAPbI3 PSCs based on this NP GaN/n-GaN cathode structure (without an extra ETL) show a power conversion efficiency of up to 18.79%. The NP GaN/n-GaN platform demonstrated herein paves the way for PSCs to take advantage of the widely available heterostructures of mature III-nitride-based technologies.

UR - http://hdl.handle.net/10754/665346

UR - https://pubs.acs.org/doi/10.1021/acsenergylett.0c01621

U2 - 10.1021/acsenergylett.0c01621

DO - 10.1021/acsenergylett.0c01621

M3 - Article

SN - 2380-8195

JO - ACS Energy Letters

JF - ACS Energy Letters

ER -

Nanoporous GaN/n-type GaN: a cathode structure for ITO-free perovskite solar cells

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