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Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors
Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt
Research output: Contribution to journal › Article › peer-review
7
Scopus
citations