TY - JOUR
T1 - Narrow-band low-noise amplifier synthesis for high-performance system-on-chip design
AU - Nieuwoudt, Arthur
AU - Ragheb, Tamer
AU - Massoud, Yehia
N1 - Generated from Scopus record by KAUST IRTS on 2022-09-13
PY - 2007/12/1
Y1 - 2007/12/1
N2 - In this paper, we present a systematic synthesis methodology for fully integrated narrow-band CMOS low-noise amplifiers (LNAs) in high-performance system-on-chip (SoC) designs. The methodology is based on deterministic gradient-based numerical nonlinear optimization and the normal boundary intersection (NBI) method for Pareto optimization. We simultaneously optimize transistor widths, bias voltages, and input and output matching network passive components, which yields integrated inductor values that are more than one order of magnitude less than those generated by several existing equation-based LNA design techniques. By generating significantly smaller inductor values, we enable the SoC integration of the complete LNA. When the synthesized LNAs are characterized using circuit-level simulation, our methodology yields up to 35% and 58% improvement in noise figure and gain, respectively. © 2007 Elsevier Ltd. All rights reserved.
AB - In this paper, we present a systematic synthesis methodology for fully integrated narrow-band CMOS low-noise amplifiers (LNAs) in high-performance system-on-chip (SoC) designs. The methodology is based on deterministic gradient-based numerical nonlinear optimization and the normal boundary intersection (NBI) method for Pareto optimization. We simultaneously optimize transistor widths, bias voltages, and input and output matching network passive components, which yields integrated inductor values that are more than one order of magnitude less than those generated by several existing equation-based LNA design techniques. By generating significantly smaller inductor values, we enable the SoC integration of the complete LNA. When the synthesized LNAs are characterized using circuit-level simulation, our methodology yields up to 35% and 58% improvement in noise figure and gain, respectively. © 2007 Elsevier Ltd. All rights reserved.
UR - https://linkinghub.elsevier.com/retrieve/pii/S0026269207002765
UR - http://www.scopus.com/inward/record.url?scp=36348949138&partnerID=8YFLogxK
U2 - 10.1016/j.mejo.2007.08.007
DO - 10.1016/j.mejo.2007.08.007
M3 - Article
SN - 0026-2692
VL - 38
SP - 1123
EP - 1134
JO - Microelectronics Journal
JF - Microelectronics Journal
IS - 12
ER -