Narrow in-gap states in doped Al2O3

Montse Casas-Cabanas; Marion Frésard; Ulrike Lüders; Raymond Frésard; Cosima B. Schuster; Udo Schwingenschlögl

doi:10.1016/j.cplett.2011.09.001

Narrow in-gap states in doped Al2O3

Montse Casas-Cabanas, Marion Frésard, Ulrike Lüders, Raymond Frésard, Cosima B. Schuster, Udo Schwingenschlögl

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Based on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al2O3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al2O3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases. © 2011 Elsevier B.V. All rights reserved.

Original language	English (US)
Pages (from-to)	29-31
Number of pages	3
Journal	Chemical Physics Letters
Volume	515
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cplett.2011.09.001
State	Published - Oct 2011

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/j.cplett.2011.09.001

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title = "Narrow in-gap states in doped Al2O3",

abstract = "Based on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al2O3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al2O3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases. {\textcopyright} 2011 Elsevier B.V. All rights reserved.",

author = "Montse Casas-Cabanas and Marion Fr{\'e}sard and Ulrike L{\"u}ders and Raymond Fr{\'e}sard and Schuster, {Cosima B.} and Udo Schwingenschl{\"o}gl",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: We thank S. Boudin for the help with the transmittance measurements, and W. Prellier for insightful discussions. M.C.C., M.F., U.L., and R.F. gratefully acknowledge the Region Basse-Normandie and the Ministere de la Recherche for financial support. C.S. thanks the Deutsche Forschungsgemeinschaft for financial support (TRR 80).",

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doi = "10.1016/j.cplett.2011.09.001",

language = "English (US)",

volume = "515",

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T1 - Narrow in-gap states in doped Al2O3

AU - Casas-Cabanas, Montse

AU - Frésard, Marion

AU - Lüders, Ulrike

AU - Frésard, Raymond

AU - Schuster, Cosima B.

AU - Schwingenschlögl, Udo

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: We thank S. Boudin for the help with the transmittance measurements, and W. Prellier for insightful discussions. M.C.C., M.F., U.L., and R.F. gratefully acknowledge the Region Basse-Normandie and the Ministere de la Recherche for financial support. C.S. thanks the Deutsche Forschungsgemeinschaft for financial support (TRR 80).

PY - 2011/10

Y1 - 2011/10

N2 - Based on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al2O3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al2O3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases. © 2011 Elsevier B.V. All rights reserved.

AB - Based on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al2O3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al2O3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases. © 2011 Elsevier B.V. All rights reserved.

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UR - https://linkinghub.elsevier.com/retrieve/pii/S0009261411010931

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U2 - 10.1016/j.cplett.2011.09.001

DO - 10.1016/j.cplett.2011.09.001

M3 - Article

SN - 0009-2614

VL - 515

SP - 29

EP - 31

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 1-3

ER -

Narrow in-gap states in doped Al2O3

Abstract

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