Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating

Jorge Alberto Holguin Lerma; Tien Khee Ng; Boon S. Ooi

doi:10.7567/1882-0786/ab0a57

Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating

Jorge Alberto Holguin Lerma, Tien Khee Ng, Boon S. Ooi

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We demonstrate narrow-line green laser emission at 513.85 nm with a linewidth of 31 pm and side-mode suppression ratio of 36.9 dB, operating under continuous-wave injection at room temperature. A high-order (40th) distributed-feedback surface grating fabricated on multimode InGaN-based green laser diodes via a focused ion beam produces resolution-limited, single-mode lasing with an optical power of 14 mW, lasing threshold of 7.27 kA cm−2, and maximum slope efficiency of 0.32 W A−1. Our realization of narrow-line green laser diodes opens a pathway toward efficient optical communications, sensing, and atomic clocks.

Original language	English (US)
Pages (from-to)	042007
Journal	Applied Physics Express
Volume	12
Issue number	4
DOIs	https://doi.org/10.7567/1882-0786/ab0a57
State	Published - Mar 27 2019

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https://repository.kaust.edu.sa/bitstream/10754/631775/1/2019%20-%20Narrow-line%20InGaNGaN%20green%20laser%20diode%20with%20high-order%20distributed-feedback%20surface%20grating%20-%20Holgu%c3%adn-Lerma%20et%20al.pdf

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@article{7f1ee1186f864fffaa0a2ae8de4f587f,

title = "Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating",

abstract = "We demonstrate narrow-line green laser emission at 513.85 nm with a linewidth of 31 pm and side-mode suppression ratio of 36.9 dB, operating under continuous-wave injection at room temperature. A high-order (40th) distributed-feedback surface grating fabricated on multimode InGaN-based green laser diodes via a focused ion beam produces resolution-limited, single-mode lasing with an optical power of 14 mW, lasing threshold of 7.27 kA cm−2, and maximum slope efficiency of 0.32 W A−1. Our realization of narrow-line green laser diodes opens a pathway toward efficient optical communications, sensing, and atomic clocks.",

author = "{Holguin Lerma}, {Jorge Alberto} and Ng, {Tien Khee} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01, GEN/1/6607-01-01, REP/1/2878-01-01, KCR/1/2081-01-01 Acknowledgements: This work was supported by the King Abdullah University of Science and Technology (KAUST) funding BAS/1/1614-01-01, GEN/1/6607-01-01, REP/1/2878-01-01; KAUST equipment funding KCR/1/2081-01-01. Funding from the King Abdulaziz City for Science and Technology (KACST) Grant no. R2-FP-008, is gratefully acknowledged.",

year = "2019",

month = mar,

day = "27",

doi = "10.7567/1882-0786/ab0a57",

language = "English (US)",

volume = "12",

pages = "042007",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "4",

}

TY - JOUR

T1 - Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating

AU - Holguin Lerma, Jorge Alberto

AU - Ng, Tien Khee

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01, GEN/1/6607-01-01, REP/1/2878-01-01, KCR/1/2081-01-01 Acknowledgements: This work was supported by the King Abdullah University of Science and Technology (KAUST) funding BAS/1/1614-01-01, GEN/1/6607-01-01, REP/1/2878-01-01; KAUST equipment funding KCR/1/2081-01-01. Funding from the King Abdulaziz City for Science and Technology (KACST) Grant no. R2-FP-008, is gratefully acknowledged.

PY - 2019/3/27

Y1 - 2019/3/27

N2 - We demonstrate narrow-line green laser emission at 513.85 nm with a linewidth of 31 pm and side-mode suppression ratio of 36.9 dB, operating under continuous-wave injection at room temperature. A high-order (40th) distributed-feedback surface grating fabricated on multimode InGaN-based green laser diodes via a focused ion beam produces resolution-limited, single-mode lasing with an optical power of 14 mW, lasing threshold of 7.27 kA cm−2, and maximum slope efficiency of 0.32 W A−1. Our realization of narrow-line green laser diodes opens a pathway toward efficient optical communications, sensing, and atomic clocks.

AB - We demonstrate narrow-line green laser emission at 513.85 nm with a linewidth of 31 pm and side-mode suppression ratio of 36.9 dB, operating under continuous-wave injection at room temperature. A high-order (40th) distributed-feedback surface grating fabricated on multimode InGaN-based green laser diodes via a focused ion beam produces resolution-limited, single-mode lasing with an optical power of 14 mW, lasing threshold of 7.27 kA cm−2, and maximum slope efficiency of 0.32 W A−1. Our realization of narrow-line green laser diodes opens a pathway toward efficient optical communications, sensing, and atomic clocks.

UR - http://hdl.handle.net/10754/631775

UR - https://iopscience.iop.org/article/10.7567/1882-0786/ab0a57/meta

UR - http://www.scopus.com/inward/record.url?scp=85065644026&partnerID=8YFLogxK

U2 - 10.7567/1882-0786/ab0a57

DO - 10.7567/1882-0786/ab0a57

M3 - Article

SN - 1882-0778

VL - 12

SP - 042007

JO - Applied Physics Express

JF - Applied Physics Express

IS - 4

ER -

Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating

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