Nature of the interfaces between stoichiometric and under-stoichiometric MoO3 and 4,4′-N,N′-dicarbazole-biphenyl: A combined theoretical and experimental study

Theodoros A. Papadopoulos, Jens Meyer, Hong Li, Zelei Guan, Antoine Kahn, Jean Luc Brédas*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

A combination of density functional theory and experimental measurements via ultraviolet and X-ray photoelectron spectroscopies is used to explore the nature of the interface between the stoichiometric molybdenum trioxide (MoO 3) or its under-stoichiometric counterpart with oxygen vacancies, and an organic hole-transport layer represented by 4,4′-N,N′- dicarbazole-biphenyl (CBP). Upon adsorption of CBP, special attention is paid to i) the appearance of gap states and the reduction of the molybdenum oxide surface, and ii) the evolution of the work function. Very good agreement is found between theory and experiment. The near alignment of the CBP highest occupied molecular orbital with the Fermi level and the conduction band edge of molybdenum oxide points to facile hole collection or injection. The interface between MoOx and an organic hole transport material is investigated in a joint theoretical and experimental study. Gap states are found to be associated with different types of oxygen vacancies and adsorption of the organic material, which induce electron donor states at different energy levels within the band gap.

Original languageEnglish (US)
Pages (from-to)6091-6099
Number of pages9
JournalAdvanced Functional Materials
Volume23
Issue number48
DOIs
StatePublished - Dec 23 2013
Externally publishedYes

Keywords

  • gap states
  • metal-oxide/organic interface
  • molybdenum oxide
  • optoelectronics
  • oxygen vacancy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Condensed Matter Physics
  • General Materials Science
  • Electrochemistry
  • Biomaterials

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