TY - GEN
T1 - Near infrared absorbing soluble poly(cyclopenta[2,1-b:3,4-b′] dithiophen-4-one)vinylene polymers exhibiting high hole and electron mobilities in ambient air
AU - Fei, Zhuping
AU - Gao, Xiang
AU - Smith, Jeremy
AU - Pattanasattayavong, Pichaya
AU - Buchaca Domingo, Ester
AU - Stingelin, Natalie
AU - Watkins, Scott E.
AU - Anthopoulos, Thomas D.
AU - Kline, R. Joseph
AU - Heeney, Martin
N1 - Generated from Scopus record by KAUST IRTS on 2023-02-14
PY - 2013/1/8
Y1 - 2013/1/8
N2 - We report the synthesis of two novel cyclopenta[2,1-b:3,4-b′] dithiophen-4-one monomers containing solubilizing alkyl groups in the peripheral 3,5 positions. Polymerization with (E)-1,2-bis(tributylstannyl)-ethylene under Stille coupling conditions afforded the first reported examples of soluble poly(cyclopentadithiophen-4-one)vinylenes. The resulting polymers absorb in the near-infrared, with a maximum thin film absorbance around 815 nm and have optical band gaps of 1.25 eV. The polymers exhibit promising ambipolar field effect transistor performance, with average saturated mobilities of 0.5 cm 2 V-1 s-1 for holes and 0.12 cm 2V-1 s-1 for electrons. The ambipolar transistors operate in both the hole and electron transport regimes in ambient air. Prolonged exposure to ambient atmosphere leads to a gradual loss of the electron transport behavior, with little change observed in the p-type mobility. © 2012 American Chemical Society.
AB - We report the synthesis of two novel cyclopenta[2,1-b:3,4-b′] dithiophen-4-one monomers containing solubilizing alkyl groups in the peripheral 3,5 positions. Polymerization with (E)-1,2-bis(tributylstannyl)-ethylene under Stille coupling conditions afforded the first reported examples of soluble poly(cyclopentadithiophen-4-one)vinylenes. The resulting polymers absorb in the near-infrared, with a maximum thin film absorbance around 815 nm and have optical band gaps of 1.25 eV. The polymers exhibit promising ambipolar field effect transistor performance, with average saturated mobilities of 0.5 cm 2 V-1 s-1 for holes and 0.12 cm 2V-1 s-1 for electrons. The ambipolar transistors operate in both the hole and electron transport regimes in ambient air. Prolonged exposure to ambient atmosphere leads to a gradual loss of the electron transport behavior, with little change observed in the p-type mobility. © 2012 American Chemical Society.
UR - https://pubs.acs.org/doi/10.1021/cm303166z
UR - http://www.scopus.com/inward/record.url?scp=84872169126&partnerID=8YFLogxK
U2 - 10.1021/cm303166z
DO - 10.1021/cm303166z
M3 - Conference contribution
SP - 59
EP - 68
BT - Chemistry of Materials
ER -