Neutral ion-implantation-induced selective quantum-dot intermixing

H. S. Djie; B. S. Ooi; V. Aimez

doi:10.1063/1.2150279

Neutral ion-implantation-induced selective quantum-dot intermixing

H. S. Djie^*, B. S. Ooi, V. Aimez

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

High spatial band-gap tuning has been observed from an InGaAsGaAs quantum-dot (QD) structure implanted with electrically neutral species, As and P ions, at 200 °C followed by a rapid thermal annealing. Phosphorous was found to be a more effective species to induce QD intermixing than the As at similar dose level. A blueshift as large as 126 meV has been observed from the P+ -implanted and intermixed sample, while only ∼14 meV has been measured from the Six Ny -capped sample.

Original language	English (US)
Article number	261102
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	26
DOIs	https://doi.org/10.1063/1.2150279
State	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2150279

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abstract = "High spatial band-gap tuning has been observed from an InGaAsGaAs quantum-dot (QD) structure implanted with electrically neutral species, As and P ions, at 200 °C followed by a rapid thermal annealing. Phosphorous was found to be a more effective species to induce QD intermixing than the As at similar dose level. A blueshift as large as 126 meV has been observed from the P+ -implanted and intermixed sample, while only ∼14 meV has been measured from the Six Ny -capped sample.",

author = "Djie, {H. S.} and Ooi, {B. S.} and V. Aimez",

year = "2005",

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AU - Ooi, B. S.

AU - Aimez, V.

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Y1 - 2005

N2 - High spatial band-gap tuning has been observed from an InGaAsGaAs quantum-dot (QD) structure implanted with electrically neutral species, As and P ions, at 200 °C followed by a rapid thermal annealing. Phosphorous was found to be a more effective species to induce QD intermixing than the As at similar dose level. A blueshift as large as 126 meV has been observed from the P+ -implanted and intermixed sample, while only ∼14 meV has been measured from the Six Ny -capped sample.

AB - High spatial band-gap tuning has been observed from an InGaAsGaAs quantum-dot (QD) structure implanted with electrically neutral species, As and P ions, at 200 °C followed by a rapid thermal annealing. Phosphorous was found to be a more effective species to induce QD intermixing than the As at similar dose level. A blueshift as large as 126 meV has been observed from the P+ -implanted and intermixed sample, while only ∼14 meV has been measured from the Six Ny -capped sample.

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M3 - Article

AN - SCOPUS:29744453926

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JO - Applied Physics Letters

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Neutral ion-implantation-induced selective quantum-dot intermixing

Abstract

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