New approach to 193-nm photoresists: Polyspironorbornane polymers

Robert P. Meagley; Linus Y. Park; Jean M.J. Frechet

doi:10.1117/12.312471

New approach to 193-nm photoresists: Polyspironorbornane polymers

Robert P. Meagley, Linus Y. Park, Jean M.J. Frechet

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

We introduce here a novel approach to highly EUV transparent, carbon dense polymers for application as photoresist materials. The backbone of the prototype polymer consists of bicyclic hydrocarbons spiro-fused to cyclohexane moieties decorated with pendant t-butyl esters. This high polymer is formed through the free radical cyclopolymerization of functionalized norbornane derivatives. Imaging experiments conducted at 193 nm demonstrate features below 0.15 microns.

Original language	English (US)
Pages (from-to)	83-90
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3333
DOIs	https://doi.org/10.1117/12.312471
State	Published - 1998
Externally published	Yes
Event	Advances in Resist Technology and Processing XV - Santa Clara, CA, United States Duration: Feb 23 1998 → Feb 23 1998

Keywords

193 nm
Cage
Chemical amplification
EUV
Etch resistant
Lithography
Microelectronics
Norbornane
Photopolymer
Photoresist
Spiro

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.312471

Cite this

@article{8d7e9aafb0874621b58e8625bb8c7394,

title = "New approach to 193-nm photoresists: Polyspironorbornane polymers",

abstract = "We introduce here a novel approach to highly EUV transparent, carbon dense polymers for application as photoresist materials. The backbone of the prototype polymer consists of bicyclic hydrocarbons spiro-fused to cyclohexane moieties decorated with pendant t-butyl esters. This high polymer is formed through the free radical cyclopolymerization of functionalized norbornane derivatives. Imaging experiments conducted at 193 nm demonstrate features below 0.15 microns.",

keywords = "193 nm, Cage, Chemical amplification, EUV, Etch resistant, Lithography, Microelectronics, Norbornane, Photopolymer, Photoresist, Spiro",

author = "Meagley, {Robert P.} and Park, {Linus Y.} and Frechet, {Jean M.J.}",

year = "1998",

doi = "10.1117/12.312471",

language = "English (US)",

volume = "3333",

pages = "83--90",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Advances in Resist Technology and Processing XV ; Conference date: 23-02-1998 Through 23-02-1998",

}

TY - JOUR

T1 - New approach to 193-nm photoresists

T2 - Advances in Resist Technology and Processing XV

AU - Meagley, Robert P.

AU - Park, Linus Y.

AU - Frechet, Jean M.J.

PY - 1998

Y1 - 1998

N2 - We introduce here a novel approach to highly EUV transparent, carbon dense polymers for application as photoresist materials. The backbone of the prototype polymer consists of bicyclic hydrocarbons spiro-fused to cyclohexane moieties decorated with pendant t-butyl esters. This high polymer is formed through the free radical cyclopolymerization of functionalized norbornane derivatives. Imaging experiments conducted at 193 nm demonstrate features below 0.15 microns.

AB - We introduce here a novel approach to highly EUV transparent, carbon dense polymers for application as photoresist materials. The backbone of the prototype polymer consists of bicyclic hydrocarbons spiro-fused to cyclohexane moieties decorated with pendant t-butyl esters. This high polymer is formed through the free radical cyclopolymerization of functionalized norbornane derivatives. Imaging experiments conducted at 193 nm demonstrate features below 0.15 microns.

KW - 193 nm

KW - Cage

KW - Chemical amplification

KW - EUV

KW - Etch resistant

KW - Lithography

KW - Microelectronics

KW - Norbornane

KW - Photopolymer

KW - Photoresist

KW - Spiro

UR - http://www.scopus.com/inward/record.url?scp=0002878333&partnerID=8YFLogxK

U2 - 10.1117/12.312471

DO - 10.1117/12.312471

M3 - Conference article

AN - SCOPUS:0002878333

SN - 0277-786X

VL - 3333

SP - 83

EP - 90

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

Y2 - 23 February 1998 through 23 February 1998

ER -

New approach to 193-nm photoresists: Polyspironorbornane polymers

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this