Abstract
Nitrogen implantation has been performed to promote the group-III intermixing in InAs quantum dots embedded in InAlGaAs quatum-well laser structure. A differential bandgap shift as large as 112 nm (65 meV) has been observed after nitrogen implantation at 5×1012 ions/cm 2, 1500 keV and annealing at 700°C. The intermixing activation is found to occur at a lower temperature than the typical dielectric cap annealing induced intermixing technique. The implantation induced a vacancy peaks at 1.5 μm above the active region. The point defects diffuse efficiently through the active region during subsequent annealing and induced quantum-dot intermixing with improved luminescence at a relatively low activation annealing temperature.
Original language | English (US) |
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Title of host publication | 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings |
Pages | 270-273 |
Number of pages | 4 |
Volume | 2006 |
State | Published - 2006 |
Externally published | Yes |
Event | 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings - Princeton, United States Duration: May 7 2006 → May 11 2006 |
Other
Other | 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings |
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Country/Territory | United States |
City | Princeton |
Period | 05/7/06 → 05/11/06 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Materials Science(all)