Nitrogen implantation induced intermixing in InAs/InAlGaAs/InP dots-in-well laser

Hery S. Djie; Yang Wang; Boon S. Ooi

Nitrogen implantation induced intermixing in InAs/InAlGaAs/InP dots-in-well laser

Hery S. Djie^*, Yang Wang, Boon S. Ooi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Nitrogen implantation has been performed to promote the group-III intermixing in InAs quantum dots embedded in InAlGaAs quatum-well laser structure. A differential bandgap shift as large as 112 nm (65 meV) has been observed after nitrogen implantation at 5×10¹² ions/cm ², 1500 keV and annealing at 700°C. The intermixing activation is found to occur at a lower temperature than the typical dielectric cap annealing induced intermixing technique. The implantation induced a vacancy peaks at 1.5 μm above the active region. The point defects diffuse efficiently through the active region during subsequent annealing and induced quantum-dot intermixing with improved luminescence at a relatively low activation annealing temperature.

Original language	English (US)
Title of host publication	2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
Pages	270-273
Number of pages	4
Volume	2006
State	Published - 2006
Externally published	Yes
Event	2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings - Princeton, United States Duration: May 7 2006 → May 11 2006

Other

Other	2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings
Country/Territory	United States
City	Princeton
Period	05/7/06 → 05/11/06

ASJC Scopus subject areas

Physics and Astronomy(all)
Materials Science(all)

Cite this

@inproceedings{16c6333bcb12442ea31568cc28d6b113,

title = "Nitrogen implantation induced intermixing in InAs/InAlGaAs/InP dots-in-well laser",

abstract = "Nitrogen implantation has been performed to promote the group-III intermixing in InAs quantum dots embedded in InAlGaAs quatum-well laser structure. A differential bandgap shift as large as 112 nm (65 meV) has been observed after nitrogen implantation at 5×1012 ions/cm 2, 1500 keV and annealing at 700°C. The intermixing activation is found to occur at a lower temperature than the typical dielectric cap annealing induced intermixing technique. The implantation induced a vacancy peaks at 1.5 μm above the active region. The point defects diffuse efficiently through the active region during subsequent annealing and induced quantum-dot intermixing with improved luminescence at a relatively low activation annealing temperature.",

author = "Djie, {Hery S.} and Yang Wang and Ooi, {Boon S.}",

year = "2006",

language = "English (US)",

isbn = "0780395581",

volume = "2006",

pages = "270--273",

booktitle = "2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings",

note = "2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings ; Conference date: 07-05-2006 Through 11-05-2006",

}

Djie, HS, Wang, Y & Ooi, BS 2006, Nitrogen implantation induced intermixing in InAs/InAlGaAs/InP dots-in-well laser. in 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings. vol. 2006, 1634166, pp. 270-273, 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, United States, 05/7/06.

TY - GEN

T1 - Nitrogen implantation induced intermixing in InAs/InAlGaAs/InP dots-in-well laser

AU - Djie, Hery S.

AU - Wang, Yang

AU - Ooi, Boon S.

PY - 2006

Y1 - 2006

N2 - Nitrogen implantation has been performed to promote the group-III intermixing in InAs quantum dots embedded in InAlGaAs quatum-well laser structure. A differential bandgap shift as large as 112 nm (65 meV) has been observed after nitrogen implantation at 5×1012 ions/cm 2, 1500 keV and annealing at 700°C. The intermixing activation is found to occur at a lower temperature than the typical dielectric cap annealing induced intermixing technique. The implantation induced a vacancy peaks at 1.5 μm above the active region. The point defects diffuse efficiently through the active region during subsequent annealing and induced quantum-dot intermixing with improved luminescence at a relatively low activation annealing temperature.

AB - Nitrogen implantation has been performed to promote the group-III intermixing in InAs quantum dots embedded in InAlGaAs quatum-well laser structure. A differential bandgap shift as large as 112 nm (65 meV) has been observed after nitrogen implantation at 5×1012 ions/cm 2, 1500 keV and annealing at 700°C. The intermixing activation is found to occur at a lower temperature than the typical dielectric cap annealing induced intermixing technique. The implantation induced a vacancy peaks at 1.5 μm above the active region. The point defects diffuse efficiently through the active region during subsequent annealing and induced quantum-dot intermixing with improved luminescence at a relatively low activation annealing temperature.

UR - http://www.scopus.com/inward/record.url?scp=33847099974&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33847099974

SN - 0780395581

SN - 9780780395589

VL - 2006

SP - 270

EP - 273

BT - 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings

T2 - 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings

Y2 - 7 May 2006 through 11 May 2006

ER -

Nitrogen implantation induced intermixing in InAs/InAlGaAs/InP dots-in-well laser

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this