Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth: Optical evidences for a reduced stacking fault density

P. P. Paskov; B. Monemar; D. Iida; T. Kawashima; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1002/pssc.200778632

Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth: Optical evidences for a reduced stacking fault density

P. P. Paskov, B. Monemar, D. Iida, T. Kawashima, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Scopus citations

Abstract

Nonpolar a-plane and m-plane GaN layers grown by MOCVD employing sidewall epitaxial lateral overgrowth (SELO) are studied by photoluminescence (PL) and spatially resolved micro-PL. The effects of the groove orientations and the groove/terrace width ratio on the emission spectra, particularly on the stacking fault (SF) related emission bands in the 3.29-3.42 eV spectral region, are examined. The PL spectra of both types of nonpolar layers reveal a significant reduction of the defect related emissions when the grooves are oriented perpendicular to the c-axis of GaN and the groove/terrace width ratio is smaller than one. The suppression of SF formation in the areas where a lateral overgrowth along the [0001] GaN direction occurs is confirmed by micro-PL measurements showing no SF related emissions over the terrace regions. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

Original language	English (US)
Title of host publication	Physica Status Solidi (C) Current Topics in Solid State Physics
Pages	1768-1770
Number of pages	3
DOIs	https://doi.org/10.1002/pssc.200778632
State	Published - Dec 1 2008
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200778632

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title = "Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth: Optical evidences for a reduced stacking fault density",

abstract = "Nonpolar a-plane and m-plane GaN layers grown by MOCVD employing sidewall epitaxial lateral overgrowth (SELO) are studied by photoluminescence (PL) and spatially resolved micro-PL. The effects of the groove orientations and the groove/terrace width ratio on the emission spectra, particularly on the stacking fault (SF) related emission bands in the 3.29-3.42 eV spectral region, are examined. The PL spectra of both types of nonpolar layers reveal a significant reduction of the defect related emissions when the grooves are oriented perpendicular to the c-axis of GaN and the groove/terrace width ratio is smaller than one. The suppression of SF formation in the areas where a lateral overgrowth along the [0001] GaN direction occurs is confirmed by micro-PL measurements showing no SF related emissions over the terrace regions. {\textcopyright} 2008 Wiley-VCH Verlag GmbH & Co. KGaA.",

author = "Paskov, {P. P.} and B. Monemar and D. Iida and T. Kawashima and M. Iwaya and S. Kamiyama and H. Amano and I. Akasaki",

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T1 - Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth: Optical evidences for a reduced stacking fault density

AU - Paskov, P. P.

AU - Monemar, B.

AU - Iida, D.

AU - Kawashima, T.

AU - Iwaya, M.

AU - Kamiyama, S.

AU - Amano, H.

AU - Akasaki, I.

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Nonpolar a-plane and m-plane GaN layers grown by MOCVD employing sidewall epitaxial lateral overgrowth (SELO) are studied by photoluminescence (PL) and spatially resolved micro-PL. The effects of the groove orientations and the groove/terrace width ratio on the emission spectra, particularly on the stacking fault (SF) related emission bands in the 3.29-3.42 eV spectral region, are examined. The PL spectra of both types of nonpolar layers reveal a significant reduction of the defect related emissions when the grooves are oriented perpendicular to the c-axis of GaN and the groove/terrace width ratio is smaller than one. The suppression of SF formation in the areas where a lateral overgrowth along the [0001] GaN direction occurs is confirmed by micro-PL measurements showing no SF related emissions over the terrace regions. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

AB - Nonpolar a-plane and m-plane GaN layers grown by MOCVD employing sidewall epitaxial lateral overgrowth (SELO) are studied by photoluminescence (PL) and spatially resolved micro-PL. The effects of the groove orientations and the groove/terrace width ratio on the emission spectra, particularly on the stacking fault (SF) related emission bands in the 3.29-3.42 eV spectral region, are examined. The PL spectra of both types of nonpolar layers reveal a significant reduction of the defect related emissions when the grooves are oriented perpendicular to the c-axis of GaN and the groove/terrace width ratio is smaller than one. The suppression of SF formation in the areas where a lateral overgrowth along the [0001] GaN direction occurs is confirmed by micro-PL measurements showing no SF related emissions over the terrace regions. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.

UR - https://onlinelibrary.wiley.com/doi/10.1002/pssc.200778632

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U2 - 10.1002/pssc.200778632

DO - 10.1002/pssc.200778632

M3 - Conference contribution

SP - 1768

EP - 1770

BT - Physica Status Solidi (C) Current Topics in Solid State Physics

ER -

Nonpolar GaN layers grown by sidewall epitaxial lateral overgrowth: Optical evidences for a reduced stacking fault density

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