Nonpolar a-plane and m-plane GaN layers grown by MOCVD employing sidewall epitaxial lateral overgrowth (SELO) are studied by photoluminescence (PL) and spatially resolved micro-PL. The effects of the groove orientations and the groove/terrace width ratio on the emission spectra, particularly on the stacking fault (SF) related emission bands in the 3.29-3.42 eV spectral region, are examined. The PL spectra of both types of nonpolar layers reveal a significant reduction of the defect related emissions when the grooves are oriented perpendicular to the c-axis of GaN and the groove/terrace width ratio is smaller than one. The suppression of SF formation in the areas where a lateral overgrowth along the  GaN direction occurs is confirmed by micro-PL measurements showing no SF related emissions over the terrace regions. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
|Original language||English (US)|
|Title of host publication||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Number of pages||3|
|State||Published - Dec 1 2008|
ASJC Scopus subject areas
- Condensed Matter Physics