@inproceedings{3ff787a6b65145459cfa206c81ba34f2,
title = "Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: Device physics and epitaxy engineering",
abstract = "The challenges and approaches for high-efficiency InGaN quantum wells (QWs) light-emitting diodes (LEDs) are presented. The studies include designs, growths, and device characteristics of 1) InGaN-based QWs LEDs with enhanced matrix element for realizing green-emitting LEDs with high internal quantum efficiency, and 2) InGaN QW LEDs device structure with lattice-matched AlInN-barrier to suppress efficiency-droop in nitride LEDs. Other approaches to improve the efficiency of the nitride LEDs will be discussed as follow: 1) surface plasmon LEDs, 2) new growth approach for dislocation density reduction in GaN, and 3) novel approaches for light extraction efficiency improvement of III-Nitride LEDs.",
keywords = "III-Nitride, InGaN QWs, MOCVD epitaxy, light emitting diodes, light extraction efficiency",
author = "Nelson Tansu and Hongping Zhao and Jing Zhang and Guangyu Liu and Li, {Xiao Hang} and Ee, {Yik Khoon} and Renbo Song and Takahiro Toma and Le Zhao and Huang, {G. S.}",
year = "2011",
doi = "10.1117/12.875901",
language = "English (US)",
isbn = "9780819484918",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Light-Emitting Diodes",
note = "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV ; Conference date: 25-01-2011 Through 27-01-2011",
}