Novel concept for thin multi-crystalline silicon solar cell process

S. De Wolf; H. F.W. Dekkers; G. Agostinelli; J. Szlufcik

Novel concept for thin multi-crystalline silicon solar cell process

S. De Wolf^*, H. F.W. Dekkers, G. Agostinelli, J. Szlufcik

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Solar cells on thin (≤150μm) multi-crystalline Si (mc-Si) substrates require diffusion lengths exceeding twice the substrate-thickness combined with an excellent rear-surface passivation in order to reach efficiencies above 16%. Moreover, thin substrates no longer allow the use of screenprinted Al for back-surface-field (BSF) and contact formation, due to excessive warping upon firing. Gettering originating from POCl₃ emitter diffusion, is shown to enhance the bulk-quality to fulfill the first requirement. PECVD amorphous-Si (a-Si) layers, on the other hand, provide very low surface recombination rates. As a consequence, a POCl₃ diffused front emitter, combined with a heterostructure a-Si / mc-Si rearside is suggested to overcome the several constraints present when shifting to the use of thinner substrates within a low-cost environment.

Original language	English (US)
Title of host publication	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Editors	K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages	1316-1319
Number of pages	4
State	Published - 2003
Externally published	Yes
Event	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: May 11 2003 → May 18 2003

Publication series

Name	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
Volume	B

Other

Other	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/Territory	Japan
City	Osaka
Period	05/11/03 → 05/18/03

ASJC Scopus subject areas

General Engineering

Cite this

De Wolf, S., Dekkers, H. F. W., Agostinelli, G., & Szlufcik, J. (2003). Novel concept for thin multi-crystalline silicon solar cell process. In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion (pp. 1316-1319). (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. B).

De Wolf, S. ; Dekkers, H. F.W. ; Agostinelli, G. et al. / Novel concept for thin multi-crystalline silicon solar cell process. Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. editor / K. Kurokawa ; L.L. Kazmerski ; B. McNeils ; M. Yamaguchi ; C. Wronski. 2003. pp. 1316-1319 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

@inproceedings{b05adccf64094c5396435810843242a9,

title = "Novel concept for thin multi-crystalline silicon solar cell process",

abstract = "Solar cells on thin (≤150μm) multi-crystalline Si (mc-Si) substrates require diffusion lengths exceeding twice the substrate-thickness combined with an excellent rear-surface passivation in order to reach efficiencies above 16%. Moreover, thin substrates no longer allow the use of screenprinted Al for back-surface-field (BSF) and contact formation, due to excessive warping upon firing. Gettering originating from POCl3 emitter diffusion, is shown to enhance the bulk-quality to fulfill the first requirement. PECVD amorphous-Si (a-Si) layers, on the other hand, provide very low surface recombination rates. As a consequence, a POCl3 diffused front emitter, combined with a heterostructure a-Si / mc-Si rearside is suggested to overcome the several constraints present when shifting to the use of thinner substrates within a low-cost environment.",

author = "{De Wolf}, S. and Dekkers, {H. F.W.} and G. Agostinelli and J. Szlufcik",

year = "2003",

language = "English (US)",

isbn = "4990181603",

series = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",

pages = "1316--1319",

editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",

booktitle = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion",

note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",

}

De Wolf, S, Dekkers, HFW, Agostinelli, G & Szlufcik, J 2003, Novel concept for thin multi-crystalline silicon solar cell process. in K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, vol. B, pp. 1316-1319, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 05/11/03.

Novel concept for thin multi-crystalline silicon solar cell process. / De Wolf, S.; Dekkers, H. F.W.; Agostinelli, G. et al.
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 1316-1319 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. B).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Novel concept for thin multi-crystalline silicon solar cell process

AU - De Wolf, S.

AU - Dekkers, H. F.W.

AU - Agostinelli, G.

AU - Szlufcik, J.

PY - 2003

Y1 - 2003

N2 - Solar cells on thin (≤150μm) multi-crystalline Si (mc-Si) substrates require diffusion lengths exceeding twice the substrate-thickness combined with an excellent rear-surface passivation in order to reach efficiencies above 16%. Moreover, thin substrates no longer allow the use of screenprinted Al for back-surface-field (BSF) and contact formation, due to excessive warping upon firing. Gettering originating from POCl3 emitter diffusion, is shown to enhance the bulk-quality to fulfill the first requirement. PECVD amorphous-Si (a-Si) layers, on the other hand, provide very low surface recombination rates. As a consequence, a POCl3 diffused front emitter, combined with a heterostructure a-Si / mc-Si rearside is suggested to overcome the several constraints present when shifting to the use of thinner substrates within a low-cost environment.

AB - Solar cells on thin (≤150μm) multi-crystalline Si (mc-Si) substrates require diffusion lengths exceeding twice the substrate-thickness combined with an excellent rear-surface passivation in order to reach efficiencies above 16%. Moreover, thin substrates no longer allow the use of screenprinted Al for back-surface-field (BSF) and contact formation, due to excessive warping upon firing. Gettering originating from POCl3 emitter diffusion, is shown to enhance the bulk-quality to fulfill the first requirement. PECVD amorphous-Si (a-Si) layers, on the other hand, provide very low surface recombination rates. As a consequence, a POCl3 diffused front emitter, combined with a heterostructure a-Si / mc-Si rearside is suggested to overcome the several constraints present when shifting to the use of thinner substrates within a low-cost environment.

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M3 - Conference contribution

AN - SCOPUS:6344231886

SN - 4990181603

SN - 9784990181604

T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

SP - 1316

EP - 1319

BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

A2 - Kurokawa, K.

A2 - Kazmerski, L.L.

A2 - McNeils, B.

A2 - Yamaguchi, M.

A2 - Wronski, C.

T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

Y2 - 11 May 2003 through 18 May 2003

ER -

Novel concept for thin multi-crystalline silicon solar cell process

Abstract

Publication series

Other

ASJC Scopus subject areas

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