@inproceedings{30897fdcc40e4041b62046508d6c4e52,
title = "Novel device concepts for high-efficiency InGaN-based light-emitting diodes",
abstract = "Novel staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs with improved momentum matrix element lead to improved internal quantum efficiency for green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal quantum efficiency, light extraction efficiency, and efficiency-droop in nitride LEDs are discussed.",
keywords = "III-Nitride, InGaN QWs, Light emitting diodes, Light extraction efficiency, MOCVD epitaxy",
author = "Hongping Zhao and Guangyu Liu and Ee, {Yik Khoon} and Li, {Xiao Hang} and Hua Tong and Jing Zhang and Huang, {G. S.} and Nelson Tansu",
year = "2010",
doi = "10.1117/12.842869",
language = "English (US)",
isbn = "9780819479983",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Gallium Nitride Materials and Devices V",
note = "Gallium Nitride Materials and Devices V ; Conference date: 25-01-2010 Through 28-01-2010",
}