TY - GEN
T1 - Novel functional devices of transition metal dichalcogenide monolayers
AU - Takenobu, Taishi
AU - Pu, Jiang
AU - Li, Lain Jong
AU - Iwasa, Yoshihiro
PY - 2014
Y1 - 2014
N2 - Recently, the transition metal dichalcogenide (TMDC) monolayers, such as MoS2, MoSe2 and WSe2, have attracted considerable interest because of its high carrier mobility, mechanical strength, large intrinsic bandgap and optical properties. Although many researches have been done by mechanically exfoliated TMDC monolayers, the chemical vapour deposition (CVD) growth of TMDC thin films that could be transferred onto other arbitrary substrates was reported, thereby providing a path forward to develop large-area CMOS electronics built onto flexible plastic and stretchable rubber substrates. Here, we firstly demonstrate the fabrication of CVD-growth MoS 2 thin-film transistors (TFTs) using ion gel as elastic gate dielectrics, opening a route for atomically thin electronics and optoelectronics on flexible and stretchable substrates.
AB - Recently, the transition metal dichalcogenide (TMDC) monolayers, such as MoS2, MoSe2 and WSe2, have attracted considerable interest because of its high carrier mobility, mechanical strength, large intrinsic bandgap and optical properties. Although many researches have been done by mechanically exfoliated TMDC monolayers, the chemical vapour deposition (CVD) growth of TMDC thin films that could be transferred onto other arbitrary substrates was reported, thereby providing a path forward to develop large-area CMOS electronics built onto flexible plastic and stretchable rubber substrates. Here, we firstly demonstrate the fabrication of CVD-growth MoS 2 thin-film transistors (TFTs) using ion gel as elastic gate dielectrics, opening a route for atomically thin electronics and optoelectronics on flexible and stretchable substrates.
UR - http://www.scopus.com/inward/record.url?scp=84906215945&partnerID=8YFLogxK
U2 - 10.1109/AM-FPD.2014.6867198
DO - 10.1109/AM-FPD.2014.6867198
M3 - Conference contribution
AN - SCOPUS:84906215945
SN - 9784863483958
T3 - Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials
SP - 283
EP - 286
BT - Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices
PB - IEEE Computer Society
T2 - 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2014
Y2 - 2 July 2014 through 4 July 2014
ER -