Novel growth and device concepts for high-efficiency ingan quantum wells light-emitting diodes

Hongping Zhao; Guangyu Liu; Xiao Hang Li; Yik Khoon Ee; Hua Tong; Jing Zhang; G. S. Huang; Nelson Tansu

Novel growth and device concepts for high-efficiency ingan quantum wells light-emitting diodes

Hongping Zhao, Guangyu Liu, Xiao Hang Li, Yik Khoon Ee, Hua Tong, Jing Zhang, G. S. Huang, Nelson Tansu^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The growths and characteristics of staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs are presented for high-efficiency green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal-quantum-efficiency, light-extraction-efficiency, and efficiency-droop in nitride LEDs are discussed.

Original language	English (US)
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2010
State	Published - 2010
Externally published	Yes
Event	Conference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States Duration: May 16 2010 → May 21 2010

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2010
Country/Territory	United States
City	San Jose, CA
Period	05/16/10 → 05/21/10

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

@inproceedings{6b685ff4a0654e378a9389f7f784cd9c,

title = "Novel growth and device concepts for high-efficiency ingan quantum wells light-emitting diodes",

abstract = "The growths and characteristics of staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs are presented for high-efficiency green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal-quantum-efficiency, light-extraction-efficiency, and efficiency-droop in nitride LEDs are discussed.",

author = "Hongping Zhao and Guangyu Liu and Li, {Xiao Hang} and Ee, {Yik Khoon} and Hua Tong and Jing Zhang and Huang, {G. S.} and Nelson Tansu",

year = "2010",

language = "English (US)",

isbn = "9781557528896",

series = "Optics InfoBase Conference Papers",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2010",

note = "Conference on Lasers and Electro-Optics, CLEO 2010 ; Conference date: 16-05-2010 Through 21-05-2010",

}

TY - GEN

T1 - Novel growth and device concepts for high-efficiency ingan quantum wells light-emitting diodes

AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Li, Xiao Hang

AU - Ee, Yik Khoon

AU - Tong, Hua

AU - Zhang, Jing

AU - Huang, G. S.

AU - Tansu, Nelson

PY - 2010

Y1 - 2010

N2 - The growths and characteristics of staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs are presented for high-efficiency green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal-quantum-efficiency, light-extraction-efficiency, and efficiency-droop in nitride LEDs are discussed.

AB - The growths and characteristics of staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs are presented for high-efficiency green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal-quantum-efficiency, light-extraction-efficiency, and efficiency-droop in nitride LEDs are discussed.

UR - http://www.scopus.com/inward/record.url?scp=84894078617&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84894078617

SN - 9781557528896

T3 - Optics InfoBase Conference Papers

BT - Conference on Lasers and Electro-Optics, CLEO 2010

T2 - Conference on Lasers and Electro-Optics, CLEO 2010

Y2 - 16 May 2010 through 21 May 2010

ER -

Novel growth and device concepts for high-efficiency ingan quantum wells light-emitting diodes

Abstract

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Other

ASJC Scopus subject areas

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