TY - JOUR
T1 - Novel P-Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices
AU - Mitra, Somak
AU - Pak, Yusin
AU - Alaal, Naresh
AU - Hedhili, Mohamed N.
AU - Almalawi, Dhaifallah R.
AU - Alwadai, Norah M.
AU - Loganathan, Kalaivanan
AU - Kumarasan, Yogeenath
AU - Lim, Namsoo
AU - Jung, Gun Y.
AU - Roqan, Iman S.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1319-01-01
Acknowledgements: S.M. and Y.P. contributed equally to this work. The authors acknowledge the support of Core lab facilities of the King Abdullah University of Science and Technology (KAUST) for TEM, FTIR, UV–vis, and XPS measurement. The authors thank KAUST for the finance support using the base fund number (BAS/1/1319-01-01). For computer time, this research used the resources of the Supercomputing Laboratory at KAUST in Thuwal, Saudi Arabia. Authors thanks Dr. Sergei Lopatin form KAUST Core lab for assisting us in the TEM measurements. Authors acknowledge the support of Heno Hwang, scientific illustrators at KAUST for producing TOC image.
PY - 2019/8/8
Y1 - 2019/8/8
N2 - Wide bandgap semiconductor (WBGS)-based deep UV (DUV) devices lag behind those operating in the visible and IR range, as no stable p-type WBGS that operates in the DUV region (
AB - Wide bandgap semiconductor (WBGS)-based deep UV (DUV) devices lag behind those operating in the visible and IR range, as no stable p-type WBGS that operates in the DUV region (
UR - http://hdl.handle.net/10754/656556
UR - https://onlinelibrary.wiley.com/doi/abs/10.1002/adom.201900801
UR - http://www.scopus.com/inward/record.url?scp=85070514213&partnerID=8YFLogxK
U2 - 10.1002/adom.201900801
DO - 10.1002/adom.201900801
M3 - Article
SN - 2195-1071
VL - 7
SP - 1900801
JO - Advanced Optical Materials
JF - Advanced Optical Materials
IS - 21
ER -