Novel photoresist design based on electrophilic aromatic substitution

B. Reck*, R. D. Allen, R. J. Twieg, C. G. Willson, S. Matuszczak, H. D.H. Stover, N. H. Li, J. M.J. Frechet

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

4 Scopus citations

Abstract

A new approach to resist materials that exhibit chemical amplification is based on systems comprised of three structural units at least one of which is polymeric: (a) an aromatic moiety such as poly(4-hydroxystyrene), Novolac, or other aromatic compounds which are susceptible to electrophilic aromatic substitution; (b) a latent electrophile which may be polyfunctional and, in the case of this study, is a carbocation precursor; (c) a material which generates strong acid upon irradiation. Exposure of a film containing these three structural components affords a latent image of acid dispersed in the polymer matrix.

Original languageEnglish (US)
Pages63-72
Number of pages10
StatePublished - 1988
Externally publishedYes
EventPhotopolymers: Principles, Processes and Materials - Regional Technical Conference - Ellenville, NY, USA
Duration: Oct 30 1988Nov 2 1988

Other

OtherPhotopolymers: Principles, Processes and Materials - Regional Technical Conference
CityEllenville, NY, USA
Period10/30/8811/2/88

ASJC Scopus subject areas

  • General Engineering

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