Numerically investigating the cause of broadband lasing from InAs/InP quantum-dash laser

Mohammed Zahed Mustafa Khan; Tien Khee Ng; Boon S. Ooi

doi:10.1109/SIECPC.2013.6551024

Numerically investigating the cause of broadband lasing from InAs/InP quantum-dash laser

Mohammed Zahed Mustafa Khan, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The authors numerically investigated the origin of broadband lasing from multi-stack InAs/InP quantum dash (Qdash) laser. For this a model based on multi-population carrier-photon rate equation is developed which treats each Qdash stacking layer separately. In addition, the coupling between the adjacent stacks is also accounted in the model apart from the inhomogeneous broadening due to dash size or composition fluctuation. Simulation results show that the effect of Qdash inhomogeneity on a single plane (in-plane or localized inhomogeneity) is negligible in broadening the lasing spectra compared to the inhomogeneity across the stacks that are emitting at different wavelength. Our results would help in further optimizing the wafer structure design and improve the lasing bandwidth.

Original language	English (US)
Title of host publication	2013 Saudi International Electronics, Communications and Photonics Conference
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)	978-1-4673-6196-5
DOIs	https://doi.org/10.1109/SIECPC.2013.6551024
State	Published - Jul 11 2013

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10.1109/SIECPC.2013.6551024

https://repository.kaust.edu.sa/bitstream/10754/312360/1/06551024.pdf

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title = "Numerically investigating the cause of broadband lasing from InAs/InP quantum-dash laser",

abstract = "The authors numerically investigated the origin of broadband lasing from multi-stack InAs/InP quantum dash (Qdash) laser. For this a model based on multi-population carrier-photon rate equation is developed which treats each Qdash stacking layer separately. In addition, the coupling between the adjacent stacks is also accounted in the model apart from the inhomogeneous broadening due to dash size or composition fluctuation. Simulation results show that the effect of Qdash inhomogeneity on a single plane (in-plane or localized inhomogeneity) is negligible in broadening the lasing spectra compared to the inhomogeneity across the stacks that are emitting at different wavelength. Our results would help in further optimizing the wafer structure design and improve the lasing bandwidth.",

author = "Khan, {Mohammed Zahed Mustafa} and Ng, {Tien Khee} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2013",

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doi = "10.1109/SIECPC.2013.6551024",

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Numerically investigating the cause of broadband lasing from InAs/InP quantum-dash laser. / Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Ooi, Boon S.
2013 Saudi International Electronics, Communications and Photonics Conference. Institute of Electrical and Electronics Engineers (IEEE), 2013.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Numerically investigating the cause of broadband lasing from InAs/InP quantum-dash laser

AU - Khan, Mohammed Zahed Mustafa

AU - Ng, Tien Khee

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2013/7/11

Y1 - 2013/7/11

N2 - The authors numerically investigated the origin of broadband lasing from multi-stack InAs/InP quantum dash (Qdash) laser. For this a model based on multi-population carrier-photon rate equation is developed which treats each Qdash stacking layer separately. In addition, the coupling between the adjacent stacks is also accounted in the model apart from the inhomogeneous broadening due to dash size or composition fluctuation. Simulation results show that the effect of Qdash inhomogeneity on a single plane (in-plane or localized inhomogeneity) is negligible in broadening the lasing spectra compared to the inhomogeneity across the stacks that are emitting at different wavelength. Our results would help in further optimizing the wafer structure design and improve the lasing bandwidth.

AB - The authors numerically investigated the origin of broadband lasing from multi-stack InAs/InP quantum dash (Qdash) laser. For this a model based on multi-population carrier-photon rate equation is developed which treats each Qdash stacking layer separately. In addition, the coupling between the adjacent stacks is also accounted in the model apart from the inhomogeneous broadening due to dash size or composition fluctuation. Simulation results show that the effect of Qdash inhomogeneity on a single plane (in-plane or localized inhomogeneity) is negligible in broadening the lasing spectra compared to the inhomogeneity across the stacks that are emitting at different wavelength. Our results would help in further optimizing the wafer structure design and improve the lasing bandwidth.

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UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6551024

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U2 - 10.1109/SIECPC.2013.6551024

DO - 10.1109/SIECPC.2013.6551024

M3 - Conference contribution

SN - 978-1-4673-6196-5

BT - 2013 Saudi International Electronics, Communications and Photonics Conference

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Numerically investigating the cause of broadband lasing from InAs/InP quantum-dash laser

Abstract

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