Observation of weak antilocalization effect in high-quality ScNiBi single crystal

L. Deng; Z. H. Liu; X. Q. Ma; Z. P. Hou; E. K. Liu; X. K. Xi; W. H. Wang; G. H. Wu; X. X. Zhang

doi:10.1063/1.4978015

Observation of weak antilocalization effect in high-quality ScNiBi single crystal

L. Deng, Z. H. Liu, X. Q. Ma, Z. P. Hou, E. K. Liu, X. K. Xi, W. H. Wang^*, G. H. Wu, X. X. Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

In this paper, we have successfully grown the high-quality ScNiBi single crystals by a Bi flux method and investigated their electronic-transport properties. It was found that the ScNiBi single crystal is a gapless semiconductor with positive linear magnetoresistance (MR). Moreover, the field-dependent MR in the low-field region has demonstrated obvious weak antilocalization (WAL) effect below 50 K. The extremely large prefactor α and angle-dependent magnetoconductance ΔG_xx suggest that the WAL effect originates from the contribution of a strong bulk spin-orbital coupling.

Original language	English (US)
Article number	105106
Journal	Journal of Applied Physics
Volume	121
Issue number	10
DOIs	https://doi.org/10.1063/1.4978015
State	Published - Mar 14 2017

ASJC Scopus subject areas

General Physics and Astronomy

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@article{a88d3aff025645c88709dc2e97a950c4,

title = "Observation of weak antilocalization effect in high-quality ScNiBi single crystal",

abstract = "In this paper, we have successfully grown the high-quality ScNiBi single crystals by a Bi flux method and investigated their electronic-transport properties. It was found that the ScNiBi single crystal is a gapless semiconductor with positive linear magnetoresistance (MR). Moreover, the field-dependent MR in the low-field region has demonstrated obvious weak antilocalization (WAL) effect below 50 K. The extremely large prefactor α and angle-dependent magnetoconductance ΔGxx suggest that the WAL effect originates from the contribution of a strong bulk spin-orbital coupling.",

author = "L. Deng and Liu, {Z. H.} and Ma, {X. Q.} and Hou, {Z. P.} and Liu, {E. K.} and Xi, {X. K.} and Wang, {W. H.} and Wu, {G. H.} and Zhang, {X. X.}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = mar,

day = "14",

doi = "10.1063/1.4978015",

language = "English (US)",

volume = "121",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Observation of weak antilocalization effect in high-quality ScNiBi single crystal

AU - Deng, L.

AU - Liu, Z. H.

AU - Ma, X. Q.

AU - Hou, Z. P.

AU - Liu, E. K.

AU - Xi, X. K.

AU - Wang, W. H.

AU - Wu, G. H.

AU - Zhang, X. X.

PY - 2017/3/14

Y1 - 2017/3/14

N2 - In this paper, we have successfully grown the high-quality ScNiBi single crystals by a Bi flux method and investigated their electronic-transport properties. It was found that the ScNiBi single crystal is a gapless semiconductor with positive linear magnetoresistance (MR). Moreover, the field-dependent MR in the low-field region has demonstrated obvious weak antilocalization (WAL) effect below 50 K. The extremely large prefactor α and angle-dependent magnetoconductance ΔGxx suggest that the WAL effect originates from the contribution of a strong bulk spin-orbital coupling.

AB - In this paper, we have successfully grown the high-quality ScNiBi single crystals by a Bi flux method and investigated their electronic-transport properties. It was found that the ScNiBi single crystal is a gapless semiconductor with positive linear magnetoresistance (MR). Moreover, the field-dependent MR in the low-field region has demonstrated obvious weak antilocalization (WAL) effect below 50 K. The extremely large prefactor α and angle-dependent magnetoconductance ΔGxx suggest that the WAL effect originates from the contribution of a strong bulk spin-orbital coupling.

UR - http://www.scopus.com/inward/record.url?scp=85015402600&partnerID=8YFLogxK

U2 - 10.1063/1.4978015

DO - 10.1063/1.4978015

M3 - Article

AN - SCOPUS:85015402600

SN - 0021-8979

VL - 121

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 105106

ER -

Observation of weak antilocalization effect in high-quality ScNiBi single crystal

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