On the characterization of a new type of oxide-confined 850 nm GaAs-based vertical-cavity surface-emitting laser

S. M. Mitani; P. K. Choudhury; Mohd Sharizal Bin Alias

doi:10.1016/j.ijleo.2006.12.007

On the characterization of a new type of oxide-confined 850 nm GaAs-based vertical-cavity surface-emitting laser

S. M. Mitani, P. K. Choudhury^*, Mohd Sharizal Bin Alias

^*Corresponding author for this work

Computer, Electrical and Mathematical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Using simulation tools, results are presented for a new type of oxide-confined vertical-cavity surface-emitting laser (VCSEL) to be operated at 850 nm region of the electromagnetic spectrum. The structural details for the device are illustrated. The novelty of the device lies in that the low-doped DBR layers as well as the barrier reduction layers within the DBRs are introduced for the device fabrication, which finally provide much better efficiency of the proposed VCSEL structure. Simulations have been performed for the analyses of several features of the VCSEL that primarily govern the operational characteristics of the device. A very small deviation from the proposed structure will essentially affect the features of the output light.

Original language	English (US)
Pages (from-to)	373-378
Number of pages	6
Journal	Optik
Volume	119
Issue number	8
DOIs	https://doi.org/10.1016/j.ijleo.2006.12.007
State	Published - Jun 16 2008

Keywords

AlGaAs structures
Quantum-well devices
VCSELs

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1016/j.ijleo.2006.12.007

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title = "On the characterization of a new type of oxide-confined 850 nm GaAs-based vertical-cavity surface-emitting laser",

abstract = "Using simulation tools, results are presented for a new type of oxide-confined vertical-cavity surface-emitting laser (VCSEL) to be operated at 850 nm region of the electromagnetic spectrum. The structural details for the device are illustrated. The novelty of the device lies in that the low-doped DBR layers as well as the barrier reduction layers within the DBRs are introduced for the device fabrication, which finally provide much better efficiency of the proposed VCSEL structure. Simulations have been performed for the analyses of several features of the VCSEL that primarily govern the operational characteristics of the device. A very small deviation from the proposed structure will essentially affect the features of the output light.",

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AU - Mitani, S. M.

AU - Choudhury, P. K.

AU - Bin Alias, Mohd Sharizal

PY - 2008/6/16

Y1 - 2008/6/16

N2 - Using simulation tools, results are presented for a new type of oxide-confined vertical-cavity surface-emitting laser (VCSEL) to be operated at 850 nm region of the electromagnetic spectrum. The structural details for the device are illustrated. The novelty of the device lies in that the low-doped DBR layers as well as the barrier reduction layers within the DBRs are introduced for the device fabrication, which finally provide much better efficiency of the proposed VCSEL structure. Simulations have been performed for the analyses of several features of the VCSEL that primarily govern the operational characteristics of the device. A very small deviation from the proposed structure will essentially affect the features of the output light.

AB - Using simulation tools, results are presented for a new type of oxide-confined vertical-cavity surface-emitting laser (VCSEL) to be operated at 850 nm region of the electromagnetic spectrum. The structural details for the device are illustrated. The novelty of the device lies in that the low-doped DBR layers as well as the barrier reduction layers within the DBRs are introduced for the device fabrication, which finally provide much better efficiency of the proposed VCSEL structure. Simulations have been performed for the analyses of several features of the VCSEL that primarily govern the operational characteristics of the device. A very small deviation from the proposed structure will essentially affect the features of the output light.

KW - AlGaAs structures

KW - Quantum-well devices

KW - VCSELs

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VL - 119

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JO - Optik

JF - Optik

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ER -

On the characterization of a new type of oxide-confined 850 nm GaAs-based vertical-cavity surface-emitting laser

Abstract

Keywords

ASJC Scopus subject areas

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