TY - GEN
T1 - On the design of balanced carbon nanotube field-effect transistor gates
AU - Dev, Kapil
AU - Massoud, Yehia
N1 - Generated from Scopus record by KAUST IRTS on 2022-09-13
PY - 2011/12/1
Y1 - 2011/12/1
N2 - In this paper, we analyze the compact models for carbon nanotube field-effect transistors (CNTFET) and observe that the logic-gates implemented using CNTFET with unoptimized device parameter have asymmetric voltage transfer characteristic. We propose the design of a balanced inverter circuit implemented using CNTFET devices. The proposed inverter circuit is functional over a wide range of supply voltage, from sub-threshold voltage to nominal supply voltage. © 2011 IEEE.
AB - In this paper, we analyze the compact models for carbon nanotube field-effect transistors (CNTFET) and observe that the logic-gates implemented using CNTFET with unoptimized device parameter have asymmetric voltage transfer characteristic. We propose the design of a balanced inverter circuit implemented using CNTFET devices. The proposed inverter circuit is functional over a wide range of supply voltage, from sub-threshold voltage to nominal supply voltage. © 2011 IEEE.
UR - http://ieeexplore.ieee.org/document/6122249/
UR - http://www.scopus.com/inward/record.url?scp=84856459121&partnerID=8YFLogxK
U2 - 10.1109/ICECS.2011.6122249
DO - 10.1109/ICECS.2011.6122249
M3 - Conference contribution
SN - 9781457718458
SP - 204
EP - 207
BT - 2011 18th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2011
ER -