TY - GEN
T1 - On the mathematical modeling of memristors
AU - Radwan, Ahmed G.
AU - Salama, Khaled N.
AU - Zidan, Mohammed A.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2011/1/21
Y1 - 2011/1/21
N2 - Since the fourth fundamental element (Memristor) became a reality by HP labs, and due to its huge potential, its mathematical models became a necessity. In this paper, we provide a simple mathematical model of Memristors characterized by linear dopant drift for sinusoidal input voltage, showing a high matching with the nonlinear SPICE simulations. The frequency response of the Memristor's resistance and its bounding conditions are derived. The fundamentals of the pinched i-v hysteresis, such as the critical resistances, the hysteresis power and the maximum operating current, are derived for the first time.
AB - Since the fourth fundamental element (Memristor) became a reality by HP labs, and due to its huge potential, its mathematical models became a necessity. In this paper, we provide a simple mathematical model of Memristors characterized by linear dopant drift for sinusoidal input voltage, showing a high matching with the nonlinear SPICE simulations. The frequency response of the Memristor's resistance and its bounding conditions are derived. The fundamentals of the pinched i-v hysteresis, such as the critical resistances, the hysteresis power and the maximum operating current, are derived for the first time.
UR - http://hdl.handle.net/10754/247351
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5696139
UR - http://www.scopus.com/inward/record.url?scp=79951705973&partnerID=8YFLogxK
U2 - 10.1109/ICM.2010.5696139
DO - 10.1109/ICM.2010.5696139
M3 - Conference contribution
SN - 9781612841496
SP - 284
EP - 287
BT - 2010 International Conference on Microelectronics
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -