On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy

Pawan Mishra; Bilal Janjua; Tien Khee Ng; Dalaver H. Anjum; Rami T. Elafandy; Aditya Prabaswara; Chao Shen; Abdelmajid Salhi; Ahmed Y. Alyamani; Munir M. El-Desouki; Boon S. Ooi

doi:10.1364/OME.6.002052

On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy

Pawan Mishra, Bilal Janjua, Tien Khee Ng, Dalaver H. Anjum, Rami T. Elafandy, Aditya Prabaswara, Chao Shen, Abdelmajid Salhi, Ahmed Y. Alyamani, Munir M. El-Desouki, Boon S. Ooi

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Abstract

In this paper, c-plane stepped- and graded- InGaN/GaN multiple quantum wells (MQWs) are grown using plasma assisted molecular beam epitaxy (PAMBE) by in situ surface stoichiometry monitoring (i-SSM). Such a technique considerably reduces the strain build-up due to indium clustering within and across graded-MQWs; especially for QW closer to the top which results in mitigation of the quantum-confined Stark effect (QCSE). This is validated by a reduced power dependent photoluminescence blueshift of 10 meV in graded-MQWs as compared to a blueshift of 17 meV for stepped-MQWs. We further analyze microstrain within the MQWs, using Raman spectroscopy and geometrical phase analysis (GPA) on high-angle annular dark-field (HAADF)-scanning transmission electron microscope (STEM) images of stepped- and graded-MQWs, highlighting the reduction of ~1% strain in graded-MQWs over stepped-MQWs. Our analysis provides direct evidence of the advantage of graded-MQWs for the commercially viable c-plane light-emitting and laser diodes. © 2016 Optical Society of America.

Original language	English (US)
Pages (from-to)	2052
Journal	Optical Materials Express
Volume	6
Issue number	6
DOIs	https://doi.org/10.1364/OME.6.002052
State	Published - May 23 2016

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10.1364/OME.6.002052

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@article{1ecfcbaeebcb4c968dae6d11d6149339,

title = "On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy",

abstract = "In this paper, c-plane stepped- and graded- InGaN/GaN multiple quantum wells (MQWs) are grown using plasma assisted molecular beam epitaxy (PAMBE) by in situ surface stoichiometry monitoring (i-SSM). Such a technique considerably reduces the strain build-up due to indium clustering within and across graded-MQWs; especially for QW closer to the top which results in mitigation of the quantum-confined Stark effect (QCSE). This is validated by a reduced power dependent photoluminescence blueshift of 10 meV in graded-MQWs as compared to a blueshift of 17 meV for stepped-MQWs. We further analyze microstrain within the MQWs, using Raman spectroscopy and geometrical phase analysis (GPA) on high-angle annular dark-field (HAADF)-scanning transmission electron microscope (STEM) images of stepped- and graded-MQWs, highlighting the reduction of ~1% strain in graded-MQWs over stepped-MQWs. Our analysis provides direct evidence of the advantage of graded-MQWs for the commercially viable c-plane light-emitting and laser diodes. {\textcopyright} 2016 Optical Society of America.",

author = "Pawan Mishra and Bilal Janjua and Ng, {Tien Khee} and Anjum, {Dalaver H.} and Elafandy, {Rami T.} and Aditya Prabaswara and Chao Shen and Abdelmajid Salhi and Alyamani, {Ahmed Y.} and El-Desouki, {Munir M.} and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting, grant no. KACST TIC R2-FP-008, and King Abdullah University of Science and Technology (KAUST) baseline funding, grant no. BAS/1/1614-01-01.",

year = "2016",

month = may,

day = "23",

doi = "10.1364/OME.6.002052",

language = "English (US)",

volume = "6",

pages = "2052",

journal = "Optical Materials Express",

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publisher = "Optical Society of America",

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TY - JOUR

T1 - On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy

AU - Mishra, Pawan

AU - Janjua, Bilal

AU - Ng, Tien Khee

AU - Anjum, Dalaver H.

AU - Elafandy, Rami T.

AU - Prabaswara, Aditya

AU - Shen, Chao

AU - Salhi, Abdelmajid

AU - Alyamani, Ahmed Y.

AU - El-Desouki, Munir M.

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting, grant no. KACST TIC R2-FP-008, and King Abdullah University of Science and Technology (KAUST) baseline funding, grant no. BAS/1/1614-01-01.

PY - 2016/5/23

Y1 - 2016/5/23

N2 - In this paper, c-plane stepped- and graded- InGaN/GaN multiple quantum wells (MQWs) are grown using plasma assisted molecular beam epitaxy (PAMBE) by in situ surface stoichiometry monitoring (i-SSM). Such a technique considerably reduces the strain build-up due to indium clustering within and across graded-MQWs; especially for QW closer to the top which results in mitigation of the quantum-confined Stark effect (QCSE). This is validated by a reduced power dependent photoluminescence blueshift of 10 meV in graded-MQWs as compared to a blueshift of 17 meV for stepped-MQWs. We further analyze microstrain within the MQWs, using Raman spectroscopy and geometrical phase analysis (GPA) on high-angle annular dark-field (HAADF)-scanning transmission electron microscope (STEM) images of stepped- and graded-MQWs, highlighting the reduction of ~1% strain in graded-MQWs over stepped-MQWs. Our analysis provides direct evidence of the advantage of graded-MQWs for the commercially viable c-plane light-emitting and laser diodes. © 2016 Optical Society of America.

AB - In this paper, c-plane stepped- and graded- InGaN/GaN multiple quantum wells (MQWs) are grown using plasma assisted molecular beam epitaxy (PAMBE) by in situ surface stoichiometry monitoring (i-SSM). Such a technique considerably reduces the strain build-up due to indium clustering within and across graded-MQWs; especially for QW closer to the top which results in mitigation of the quantum-confined Stark effect (QCSE). This is validated by a reduced power dependent photoluminescence blueshift of 10 meV in graded-MQWs as compared to a blueshift of 17 meV for stepped-MQWs. We further analyze microstrain within the MQWs, using Raman spectroscopy and geometrical phase analysis (GPA) on high-angle annular dark-field (HAADF)-scanning transmission electron microscope (STEM) images of stepped- and graded-MQWs, highlighting the reduction of ~1% strain in graded-MQWs over stepped-MQWs. Our analysis provides direct evidence of the advantage of graded-MQWs for the commercially viable c-plane light-emitting and laser diodes. © 2016 Optical Society of America.

UR - http://hdl.handle.net/10754/621519

UR - https://www.osapublishing.org/abstract.cfm?URI=ome-6-6-2052

UR - http://www.scopus.com/inward/record.url?scp=84981347219&partnerID=8YFLogxK

U2 - 10.1364/OME.6.002052

DO - 10.1364/OME.6.002052

M3 - Article

SN - 2159-3930

VL - 6

SP - 2052

JO - Optical Materials Express

JF - Optical Materials Express

IS - 6

ER -

On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy

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