On the properties of conducting filament in ReRAM

Xiaojuan Lian; Mario Lanza; Alberto Rodríguez; Enrique Miranda; Jordi Suñé

doi:10.1109/ICSICT.2014.7021484

On the properties of conducting filament in ReRAM

Xiaojuan Lian, Mario Lanza, Alberto Rodríguez, Enrique Miranda, Jordi Suñé

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

The conducting properties of resistive switching filaments in ReRAM are studied. Departing from first-principle simulations of electron transport along paths of oxygen vacancies in HfO2, the Quantum Point Contact model is reformulated in terms of a bundle of such vacancy paths. By doing this, the number of model parameters is reduced and a much clearer link between the microscopic structure of the conductive filament and its electrical properties can be provided. As an example, a simple geometrical model for the microscopic structure of the CF is proposed and it is used to track the change of the conducting properties during the set/reset transitions. The model has been further checked by measurements at the nanoscale by means of CAFM.

Original language	English (US)
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021484
State	Published - Jan 23 2014
Externally published	Yes

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10.1109/ICSICT.2014.7021484

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title = "On the properties of conducting filament in ReRAM",

abstract = "The conducting properties of resistive switching filaments in ReRAM are studied. Departing from first-principle simulations of electron transport along paths of oxygen vacancies in HfO2, the Quantum Point Contact model is reformulated in terms of a bundle of such vacancy paths. By doing this, the number of model parameters is reduced and a much clearer link between the microscopic structure of the conductive filament and its electrical properties can be provided. As an example, a simple geometrical model for the microscopic structure of the CF is proposed and it is used to track the change of the conducting properties during the set/reset transitions. The model has been further checked by measurements at the nanoscale by means of CAFM.",

author = "Xiaojuan Lian and Mario Lanza and Alberto Rodr{\'i}guez and Enrique Miranda and Jordi Su{\~n}{\'e}",

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On the properties of conducting filament in ReRAM. / Lian, Xiaojuan; Lanza, Mario; Rodríguez, Alberto et al.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc., 2014.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - On the properties of conducting filament in ReRAM

AU - Lian, Xiaojuan

AU - Lanza, Mario

AU - Rodríguez, Alberto

AU - Miranda, Enrique

AU - Suñé, Jordi

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2014/1/23

Y1 - 2014/1/23

N2 - The conducting properties of resistive switching filaments in ReRAM are studied. Departing from first-principle simulations of electron transport along paths of oxygen vacancies in HfO2, the Quantum Point Contact model is reformulated in terms of a bundle of such vacancy paths. By doing this, the number of model parameters is reduced and a much clearer link between the microscopic structure of the conductive filament and its electrical properties can be provided. As an example, a simple geometrical model for the microscopic structure of the CF is proposed and it is used to track the change of the conducting properties during the set/reset transitions. The model has been further checked by measurements at the nanoscale by means of CAFM.

AB - The conducting properties of resistive switching filaments in ReRAM are studied. Departing from first-principle simulations of electron transport along paths of oxygen vacancies in HfO2, the Quantum Point Contact model is reformulated in terms of a bundle of such vacancy paths. By doing this, the number of model parameters is reduced and a much clearer link between the microscopic structure of the conductive filament and its electrical properties can be provided. As an example, a simple geometrical model for the microscopic structure of the CF is proposed and it is used to track the change of the conducting properties during the set/reset transitions. The model has been further checked by measurements at the nanoscale by means of CAFM.

UR - http://ieeexplore.ieee.org/document/7021484/

UR - http://www.scopus.com/inward/record.url?scp=84946688886&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2014.7021484

DO - 10.1109/ICSICT.2014.7021484

M3 - Conference contribution

SN - 9781479932962

BT - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

On the properties of conducting filament in ReRAM

Abstract

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