TY - JOUR
T1 - One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy
AU - Iida, Daisuke
AU - Iwaya, Motoaki
AU - Kamiyama, Satoshi
AU - Amano, Hiroshi
AU - Akasaki, Isamu
N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21
PY - 2009/5/1
Y1 - 2009/5/1
N2 - The selective regrowth of GaN during sidewall-seeded epitaxial lateral overgrowth was performed. In addition to adjusting the V/III ratio, control of offset angle of the sidewall was found to be effective for realizing one-sidewall-seeded a-plane (1 1 2̄ 0) GaN on r-plane (1 1̄ 0 2) sapphire. The number of coalescence regions on the grooves was reduced, and threading-dislocation and stacking-fault densities as low as 106-107 cm-2 and 103-104 cm-1, respectively, were successfully realized. © 2009 Elsevier B.V. All rights reserved.
AB - The selective regrowth of GaN during sidewall-seeded epitaxial lateral overgrowth was performed. In addition to adjusting the V/III ratio, control of offset angle of the sidewall was found to be effective for realizing one-sidewall-seeded a-plane (1 1 2̄ 0) GaN on r-plane (1 1̄ 0 2) sapphire. The number of coalescence regions on the grooves was reduced, and threading-dislocation and stacking-fault densities as low as 106-107 cm-2 and 103-104 cm-1, respectively, were successfully realized. © 2009 Elsevier B.V. All rights reserved.
UR - https://linkinghub.elsevier.com/retrieve/pii/S0022024809000591
UR - http://www.scopus.com/inward/record.url?scp=65749096483&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2009.01.036
DO - 10.1016/j.jcrysgro.2009.01.036
M3 - Article
SN - 0022-0248
VL - 311
SP - 2887
EP - 2890
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 10
ER -