Abstract
A quantum well intermixing technique in GaAs/AlGaAs structure developed for band-gap tuned lasers was studied. The technique used a grown-in AlAs as intermixing source and an oxidized AlAs as intermixing mask by one-step rapid thermal process. The method being impurity-free, simpler and an one-step process enhancement and supression of QWI could be achieved.
| Original language | English (US) |
|---|---|
| Pages | II56-II57 |
| State | Published - 2001 |
| Externally published | Yes |
| Event | 4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan Duration: Jul 15 2001 → Jul 19 2001 |
Other
| Other | 4th Pacific Rim Conference on Lasers and Electro-Optics |
|---|---|
| Country/Territory | Japan |
| City | Chiba |
| Period | 07/15/01 → 07/19/01 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering