Optical and structural properties of Eu-implanted Inx Al 1-xN

I. S. Roqan; K. P. O'Donnell; R. W. Martin; C. Trager-Cowan; V. Matias; A. Vantomme; K. Lorenz; E. Alves; I. M. Watson

doi:10.1063/1.3245386

Optical and structural properties of Eu-implanted In_x Al _1-xN

I. S. Roqan, K. P. O'Donnell, R. W. Martin, C. Trager-Cowan, V. Matias, A. Vantomme, K. Lorenz, E. Alves, I. M. Watson

Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Off-axis implantation of 80 keV Eu ions into epitaxial c -plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu³⁺ emission linewidth and key structural parameters of In _xAl_1-xN films on GaN in the composition range near lattice matching (x∼0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu³⁺ emission from In _0.13 Al_0.87 N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.

Original language	English (US)
Article number	083508
Journal	Journal of Applied Physics
Volume	106
Issue number	8
DOIs	https://doi.org/10.1063/1.3245386
State	Published - 2009

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.3245386

Cite this

@article{4221d7dd18e3474f924c15d629222ab1,

title = "Optical and structural properties of Eu-implanted Inx Al 1-xN",

abstract = "Off-axis implantation of 80 keV Eu ions into epitaxial c -plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu3+ emission linewidth and key structural parameters of In xAl1-xN films on GaN in the composition range near lattice matching (x∼0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu3+ emission from In 0.13 Al0.87 N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.",

author = "Roqan, {I. S.} and O'Donnell, {K. P.} and Martin, {R. W.} and C. Trager-Cowan and V. Matias and A. Vantomme and K. Lorenz and E. Alves and Watson, {I. M.}",

year = "2009",

doi = "10.1063/1.3245386",

language = "English (US)",

volume = "106",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "8",

}

TY - JOUR

T1 - Optical and structural properties of Eu-implanted Inx Al 1-xN

AU - Roqan, I. S.

AU - O'Donnell, K. P.

AU - Martin, R. W.

AU - Trager-Cowan, C.

AU - Matias, V.

AU - Vantomme, A.

AU - Lorenz, K.

AU - Alves, E.

AU - Watson, I. M.

PY - 2009

Y1 - 2009

N2 - Off-axis implantation of 80 keV Eu ions into epitaxial c -plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu3+ emission linewidth and key structural parameters of In xAl1-xN films on GaN in the composition range near lattice matching (x∼0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu3+ emission from In 0.13 Al0.87 N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.

AB - Off-axis implantation of 80 keV Eu ions into epitaxial c -plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu3+ emission linewidth and key structural parameters of In xAl1-xN films on GaN in the composition range near lattice matching (x∼0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu3+ emission from In 0.13 Al0.87 N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.

UR - http://www.scopus.com/inward/record.url?scp=70350726005&partnerID=8YFLogxK

U2 - 10.1063/1.3245386

DO - 10.1063/1.3245386

M3 - Article

AN - SCOPUS:70350726005

SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 083508

ER -

Optical and structural properties of Eu-implanted In_x Al _1-xN

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this