Optical, electrochemical, and structural properties of Er-doped porous silicon

Guido Mula*, Susanna Setzu, Gianluca Manunza, Roberta Ruffilli, Andrea Falqui

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We present here a study of Er doping of n +-type porous silicon. The samples were characterized in situ by their electrochemical behavior and ex situ by optical reflectivity and scanning electron microscopy (SEM). A clear correlation between the optical properties and the Er content of the samples is demonstrated. Refractive index dependence on Er content has also been obtained through simulations of reflectivity spectra in the 350-2500 nm range.

Original languageEnglish (US)
Pages (from-to)11256-11260
Number of pages5
JournalJOURNAL OF PHYSICAL CHEMISTRY C
Volume116
Issue number20
DOIs
StatePublished - May 24 2012
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Energy
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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