Abstract
The electronic structure of normal spinel structure ZnRh 2O 4 is investigated using combined optical properties measurements and density functional calculations. We find semiconducting behavior with an indirect band gap between crystal field split Rh 4d levels, with a t 2g valence band and an e g conduction band. The band gap is found to be ∼1.2 eV based on a comparison of the calculated and measured optical conductivities. The results are discussed in terms of potential photoelectrochemical applications.
Original language | English (US) |
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Pages (from-to) | 2696-2700 |
Number of pages | 5 |
Journal | Chemistry of Materials |
Volume | 18 |
Issue number | 11 |
DOIs | |
State | Published - May 30 2006 |
Externally published | Yes |
ASJC Scopus subject areas
- General Chemistry
- General Chemical Engineering
- Materials Chemistry