Optical study of the band structure of wurtzite GaP nanowires

S. Assali; J. Greil; I. Zardo; Abderrezak Belabbes; M. W. A. de Moor; S. Koelling; P. M. Koenraad; F. Bechstedt; E. P. A. M. Bakkers; J. E. M. Haverkort

doi:10.1063/1.4959147

Optical study of the band structure of wurtzite GaP nanowires

S. Assali, J. Greil, I. Zardo, Abderrezak Belabbes, M. W. A. de Moor, S. Koelling, P. M. Koenraad, F. Bechstedt, E. P. A. M. Bakkers, J. E. M. Haverkort

Physical Sciences and Engineering

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34 Scopus citations

Abstract

We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.

Original language	English (US)
Pages (from-to)	044304
Journal	Journal of Applied Physics
Volume	120
Issue number	4
DOIs	https://doi.org/10.1063/1.4959147
State	Published - Jul 26 2016

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@article{8ac970436ebb420ea31a3aff6f2ac727,

title = "Optical study of the band structure of wurtzite GaP nanowires",

abstract = "We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.",

author = "S. Assali and J. Greil and I. Zardo and Abderrezak Belabbes and {de Moor}, {M. W. A.} and S. Koelling and Koenraad, {P. M.} and F. Bechstedt and Bakkers, {E. P. A. M.} and Haverkort, {J. E. M.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors thank P. J. van Veldhoven for the technical support with the MOVPE reactor, M. A. Verheijen for the TEM investigation, and A. Silov, T. T. T. Vu, D. van Dam, and L. Gagliano for the fruitful discussion. We thank the Dutch Organization for Scientific Research (NWO-VICI 700.10.441). NWO is also acknowledged for funding the Atom Probe facility. J. Greil acknowledges funding by the Austrian Science Fund (FWF): J3540-N30.",

year = "2016",

month = jul,

day = "26",

doi = "10.1063/1.4959147",

language = "English (US)",

volume = "120",

pages = "044304",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Optical study of the band structure of wurtzite GaP nanowires

AU - Assali, S.

AU - Greil, J.

AU - Zardo, I.

AU - Belabbes, Abderrezak

AU - de Moor, M. W. A.

AU - Koelling, S.

AU - Koenraad, P. M.

AU - Bechstedt, F.

AU - Bakkers, E. P. A. M.

AU - Haverkort, J. E. M.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors thank P. J. van Veldhoven for the technical support with the MOVPE reactor, M. A. Verheijen for the TEM investigation, and A. Silov, T. T. T. Vu, D. van Dam, and L. Gagliano for the fruitful discussion. We thank the Dutch Organization for Scientific Research (NWO-VICI 700.10.441). NWO is also acknowledged for funding the Atom Probe facility. J. Greil acknowledges funding by the Austrian Science Fund (FWF): J3540-N30.

PY - 2016/7/26

Y1 - 2016/7/26

N2 - We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.

AB - We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescence (PL) and time-resolved PL measurements in the temperature range from 4 K to 300 K, together with atom probe tomography to identify residual impurities in the nanowires. At low temperature, the WZ GaP luminescence shows donor-acceptor pair emission at 2.115 eV and 2.088 eV, and Burstein-Moss band-filling continuum between 2.180 and 2.253 eV, resulting in a direct band gap above 2.170 eV. Sharp exciton α-β-γ lines are observed at 2.140–2.164–2.252 eV, respectively, showing clear differences in lifetime, presence of phonon replicas, and temperature-dependence. The excitonic nature of those peaks is critically discussed, leading to a direct band gap of ∼2.190 eV and to a resonant state associated with the γ-line ∼80 meV above the Γ8C conduction band edge.

UR - http://hdl.handle.net/10754/618376

UR - http://scitation.aip.org/content/aip/journal/jap/120/4/10.1063/1.4959147

UR - http://www.scopus.com/inward/record.url?scp=84979993801&partnerID=8YFLogxK

U2 - 10.1063/1.4959147

DO - 10.1063/1.4959147

M3 - Article

SN - 0021-8979

VL - 120

SP - 044304

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Optical study of the band structure of wurtzite GaP nanowires

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