TY - JOUR
T1 - Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions
AU - Hu, Weijin
AU - Wang, Zhihong
AU - Yu, Weili
AU - Wu, Tao
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by King Abdullah University of Science and Technology (KAUST).
PY - 2016/2/29
Y1 - 2016/2/29
N2 - Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.
AB - Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresistance as large as 105. Furthermore, the FTJ memory states could be modulated by light illumination, which is accompanied by a hysteretic photovoltaic effect. These complimentary effects are attributed to the bias- and light-induced modulation of the tunnel barrier, both in height and width, at the semiconductor/ferroelectric interface. Overall, the highly tunable tunnelling electroresistance and the correlated photovoltaic functionalities provide a new route for producing and non-destructively sensing multiple non-volatile electronic states in such FTJs.
UR - http://hdl.handle.net/10754/600453
UR - http://www.nature.com/doifinder/10.1038/ncomms10808
UR - http://www.scopus.com/inward/record.url?scp=84959449419&partnerID=8YFLogxK
U2 - 10.1038/ncomms10808
DO - 10.1038/ncomms10808
M3 - Article
C2 - 26924259
SN - 2041-1723
VL - 7
JO - Nature Communications
JF - Nature Communications
IS - 1
ER -