TY - JOUR
T1 - Optically Controlled Ferroelectric Nanodomains for Logic-in-Memory Photonic Devices with Simplified Structures
AU - Xue, Fei
AU - He, Xin
AU - Periyanagounder, Dharmaraj
AU - Ji, Zhigang
AU - Li, Lain-Jong
AU - He, Jr-Hau
AU - Zhang, Xixiang
N1 - KAUST Repository Item: Exported on 2021-02-19
Acknowledged KAUST grant number(s): ORS-2016-CRG5-2996
Acknowledgements: The work was supported by KAUST with a funding ORS-2016-CRG5-2996 and City University of Hong Kong.
PY - 2021
Y1 - 2021
N2 - We report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric α-In2Se3. We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW materials based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using α-In2Se3 memory devices we also demonstrate the universal OR and AND optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW materials based optoelectronic memories for dense device integration and next-generation computation.
AB - We report visible-light-induced ferroelectric nanodomain reversal in conductive van der Waals (vdW) ferroelectric α-In2Se3. We show its promising application in two-terminal optoelectronic memory devices. Compared to other vdW materials based optoelectronic memories, such a novel working prototype allows for the device operation confined within a single material channel bridging its two electrodes, which greatly reduces the complexities of device construction. In addition, using α-In2Se3 memory devices we also demonstrate the universal OR and AND optical logic gates for logic-in-memory application. Our results provide a new avenue to design simplified structures of vdW materials based optoelectronic memories for dense device integration and next-generation computation.
UR - http://hdl.handle.net/10754/667493
M3 - Article
JO - Accepted by IEEE Transactions on Electron Devices
JF - Accepted by IEEE Transactions on Electron Devices
ER -