Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates

Yuh Shiuan Liu, Zachary Lochner, Tsung Ting Kao, Md Mahbub Satter, Xiao Hang Li, Jae Hyun Ryou, Shyh Chiang Shen, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis*, Yong Wei, Hongen Xie, Alec Fischer, Fernando Ponce

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


In this study, we employed bulk (0001) AlN substrates for the metalorganic chemical vapor deposition growth of AlGaN multi-quantum-well heterostructures in an Aixtron 6 × 2″ close-coupled showerhead reactor. The wafers were fabricated into cleaved bars with a cavity length of ∼1 mm. Two different layer structure designs are presented in this work. Both laser bars were optically pumped by a pulsed 193 nm ArF excimer laser at room temperature. The lasing wavelengths are 243.5 nm and 245.3 nm with threshold power density 427 kW/cm2 and 297 kW/cm2, respectively. Both laser bars showed transverse electric-polarization-dominated optical emission when operating above threshold.

Original languageEnglish (US)
Pages (from-to)258-260
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number2
StatePublished - Feb 2014
Externally publishedYes


  • AlGaN
  • III-nitride semiconductors
  • Lasers
  • Metalorganic chemical vapor deposition

ASJC Scopus subject areas

  • Condensed Matter Physics


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