@inproceedings{2c7037505fb54b329d058e17e0c30959,
title = "Optically pumped low-threshold UV lasers",
abstract = "Recently, low-threshold optically-pumped DUV lasers containing AlGaN-based multiple-quantum wells (MQWs) have been demonstrated by homoepitaxial growth on c-plane bulk AlN substrates [1-5]. The bulk AlN substrates were used in these studies due to low-dislocation density and reduction of the lattice mismatch and thermal expansion difference between the AlN substrate and Al-rich AlGaN epitaxial layers, thus leading to high-quality active regions with relatively low-dislocation density. However, because of high cost, smaller area, and impurity absorption of the bulk AlN substrates today, it is much more desirable to grow DUV lasers on the vastly available and lower-cost sapphire substrates.",
author = "Li, {Xiao Hang} and Theeradetch Detchprohm and Liu, {Yuh Shiuan} and Dupuis, {Russell D.} and Kao, {Tsung Ting} and Saniul Haq and Shen, {Shyh Chiang} and Karan Mehta and Yoder, {P. Douglas} and Shuo Wang and Wei, {Yong O.} and Hongen Xie and Fischer, {Alec M.} and Ponce, {Fernando A.} and Tim Wernicke and Christoph Reich and Martin Martens and Michael Kneissl",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE Summer Topicals Meeting Series, SUM 2015 ; Conference date: 13-07-2015 Through 15-07-2015",
year = "2015",
month = sep,
day = "9",
doi = "10.1109/PHOSST.2015.7248226",
language = "English (US)",
series = "2015 IEEE Summer Topicals Meeting Series, SUM 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "119--120",
booktitle = "2015 IEEE Summer Topicals Meeting Series, SUM 2015",
address = "United States",
}