Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

Zhe Zhuang; Daisuke Iida; Pavel Kirilenko; Martin Velazquez-Rizo; Kazuhiro Ohkawa

doi:10.1364/oe.389725

Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

Zhe Zhuang, Daisuke Iida, Pavel Kirilenko, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Fabrication of indium tin oxide (ITO) was optimized for InGaN-based amber/red light-emitting diodes (LEDs). A radiofrequency sputtering reduced the sheet resistivity of ITO at low pressures, and a subsequent two-step annealing resulted in a low sheet resistivity (below 2×10−4 Ωcm) and high transmittance (over 98%) in the amber and red regions between 590 nm to 780 nm. Double ITO layers by sputtering could form an excellent ohmic contact with p-GaN. Application of the double ITO layers on amber and red LEDs enhanced light output power by 15.6% and 13.0%, respectively, compared to those using ITO by e-beam evaporation.

Original language	English (US)
Pages (from-to)	12311
Journal	Optics Express
Volume	28
Issue number	8
DOIs	https://doi.org/10.1364/oe.389725
State	Published - Mar 26 2020

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https://repository.kaust.edu.sa/bitstream/10754/662533/1/optimal%20ITO.pdf

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title = "Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes",

abstract = "Fabrication of indium tin oxide (ITO) was optimized for InGaN-based amber/red light-emitting diodes (LEDs). A radiofrequency sputtering reduced the sheet resistivity of ITO at low pressures, and a subsequent two-step annealing resulted in a low sheet resistivity (below 2×10−4 Ωcm) and high transmittance (over 98%) in the amber and red regions between 590 nm to 780 nm. Double ITO layers by sputtering could form an excellent ohmic contact with p-GaN. Application of the double ITO layers on amber and red LEDs enhanced light output power by 15.6% and 13.0%, respectively, compared to those using ITO by e-beam evaporation.",

author = "Zhe Zhuang and Daisuke Iida and Pavel Kirilenko and Martin Velazquez-Rizo and Kazuhiro Ohkawa",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by King Abdullah University of Science and Technology (KAUST).",

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doi = "10.1364/oe.389725",

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T1 - Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

AU - Zhuang, Zhe

AU - Iida, Daisuke

AU - Kirilenko, Pavel

AU - Velazquez-Rizo, Martin

AU - Ohkawa, Kazuhiro

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by King Abdullah University of Science and Technology (KAUST).

PY - 2020/3/26

Y1 - 2020/3/26

N2 - Fabrication of indium tin oxide (ITO) was optimized for InGaN-based amber/red light-emitting diodes (LEDs). A radiofrequency sputtering reduced the sheet resistivity of ITO at low pressures, and a subsequent two-step annealing resulted in a low sheet resistivity (below 2×10−4 Ωcm) and high transmittance (over 98%) in the amber and red regions between 590 nm to 780 nm. Double ITO layers by sputtering could form an excellent ohmic contact with p-GaN. Application of the double ITO layers on amber and red LEDs enhanced light output power by 15.6% and 13.0%, respectively, compared to those using ITO by e-beam evaporation.

AB - Fabrication of indium tin oxide (ITO) was optimized for InGaN-based amber/red light-emitting diodes (LEDs). A radiofrequency sputtering reduced the sheet resistivity of ITO at low pressures, and a subsequent two-step annealing resulted in a low sheet resistivity (below 2×10−4 Ωcm) and high transmittance (over 98%) in the amber and red regions between 590 nm to 780 nm. Double ITO layers by sputtering could form an excellent ohmic contact with p-GaN. Application of the double ITO layers on amber and red LEDs enhanced light output power by 15.6% and 13.0%, respectively, compared to those using ITO by e-beam evaporation.

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JO - Optics Express

JF - Optics Express

IS - 8

ER -

Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes

Abstract

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