TY - JOUR
T1 - Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers
AU - Fuentes-Fernandez, E. M A
AU - Baldenegro-Pérez, Leonardo Aurelio
AU - Quevedo-López, Manuel Angel Quevedo
AU - Gnade, Bruce E.
AU - Hande, Abhiman
AU - Shah, Pradeep
AU - Alshareef, Husam N.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to thank to NSF phase I SBIR and the Texas Emerging Technology Found for partial financial support and the Army Research Laboratories for their assistance in dry etch process.
PY - 2011/9
Y1 - 2011/9
N2 - Lead zirconate titanate, Pb(Zr0.53,Ti0.47)O 3 or PZT, thin films and integrated cantilevers have been fabricated for energy harvesting applications. The PZT films were deposited on PECVD SiO2/Si substrates with a sol-gel derived ZrO2 buffer layer. It is found that lead content in the starting solution and ramp rate during film crystallization are critical to achieving large-grained films on the ZrO2 surface. The electrical properties of the PZT films were measured using metal-ferroelectric-metal and inter-digital electrode structures, and revealed substantial improvement in film properties by controlling the process conditions. Functional cantilevers are demonstrated using the optimized films with output of 1.4 V peak-to-peak at 1 kHz and 2.5 g. © 2011 Elsevier Ltd. All rights reserved.
AB - Lead zirconate titanate, Pb(Zr0.53,Ti0.47)O 3 or PZT, thin films and integrated cantilevers have been fabricated for energy harvesting applications. The PZT films were deposited on PECVD SiO2/Si substrates with a sol-gel derived ZrO2 buffer layer. It is found that lead content in the starting solution and ramp rate during film crystallization are critical to achieving large-grained films on the ZrO2 surface. The electrical properties of the PZT films were measured using metal-ferroelectric-metal and inter-digital electrode structures, and revealed substantial improvement in film properties by controlling the process conditions. Functional cantilevers are demonstrated using the optimized films with output of 1.4 V peak-to-peak at 1 kHz and 2.5 g. © 2011 Elsevier Ltd. All rights reserved.
UR - http://hdl.handle.net/10754/561855
UR - https://linkinghub.elsevier.com/retrieve/pii/S0038110111002061
UR - http://www.scopus.com/inward/record.url?scp=80051793536&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2011.05.027
DO - 10.1016/j.sse.2011.05.027
M3 - Article
SN - 0038-1101
VL - 63
SP - 89
EP - 93
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 1
ER -