Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics

Duo Mao; Manuel Angel Quevedo Quevedo-López; Harvey J. Stiegler; Bruce E. Gnade; Husam N. Alshareef

doi:10.1016/j.orgel.2010.02.012

Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics

Duo Mao, Manuel Angel Quevedo Quevedo-López, Harvey J. Stiegler, Bruce E. Gnade, Husam N. Alshareef

Research output: Contribution to journal › Article › peer-review

113 Scopus citations

Abstract

The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.

Original language	English (US)
Pages (from-to)	925-932
Number of pages	8
Journal	Organic Electronics
Volume	11
Issue number	5
DOIs	https://doi.org/10.1016/j.orgel.2010.02.012
State	Published - May 2010

ASJC Scopus subject areas

Materials Chemistry
Biomaterials
General Chemistry
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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10.1016/j.orgel.2010.02.012

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@article{9c3bbdd4082b496bab150c47e60b5d52,

title = "Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics",

abstract = "The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.",

author = "Duo Mao and Quevedo-L{\'o}pez, {Manuel Angel Quevedo} and Stiegler, {Harvey J.} and Gnade, {Bruce E.} and Alshareef, {Husam N.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors thank the Army Research Laboratory (ARL) for partial financial support of this project. We would also like to thank Dr. Eric Forsythe of ARL for very helpful discussions regarding non-volatile memory integration.",

year = "2010",

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doi = "10.1016/j.orgel.2010.02.012",

language = "English (US)",

volume = "11",

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AU - Mao, Duo

AU - Quevedo-López, Manuel Angel Quevedo

AU - Stiegler, Harvey J.

AU - Gnade, Bruce E.

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors thank the Army Research Laboratory (ARL) for partial financial support of this project. We would also like to thank Dr. Eric Forsythe of ARL for very helpful discussions regarding non-volatile memory integration.

PY - 2010/5

Y1 - 2010/5

N2 - The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.

AB - The impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.

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JO - Organic Electronics

JF - Organic Electronics

IS - 5

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Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics

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