TY - JOUR
T1 - Optimization of Quantum-Dot Molecular Beam Epitaxy for Broad Spectral Bandwidth Devices
AU - Majid, Mohammed Abdul
AU - Hugues, M.
AU - Vézian, S.
AU - Childs, D. T. D.
AU - Hogg, R. A.
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2012/12
Y1 - 2012/12
N2 - The optimization of the key growth parameters for broad spectral bandwidth devices based on quantum dots is reported. A combination of atomic force microscopy, photoluminescence of test samples, and optoelectronic characterization of superluminescent diodes (SLDs) is used to optimize the growth conditions to obtain high-quality devices with large spectral bandwidth, radiative efficiency (due to a reduced defective-dot density), and thus output power. The defective-dot density is highlighted as being responsible for the degradation of device performance. An SLD device with 160 nm of bandwidth centered at 1230 nm is demonstrated.
AB - The optimization of the key growth parameters for broad spectral bandwidth devices based on quantum dots is reported. A combination of atomic force microscopy, photoluminescence of test samples, and optoelectronic characterization of superluminescent diodes (SLDs) is used to optimize the growth conditions to obtain high-quality devices with large spectral bandwidth, radiative efficiency (due to a reduced defective-dot density), and thus output power. The defective-dot density is highlighted as being responsible for the degradation of device performance. An SLD device with 160 nm of bandwidth centered at 1230 nm is demonstrated.
UR - http://hdl.handle.net/10754/528240
UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6332455
UR - http://www.scopus.com/inward/record.url?scp=84869417673&partnerID=8YFLogxK
U2 - 10.1109/JPHOT.2012.2225140
DO - 10.1109/JPHOT.2012.2225140
M3 - Article
SN - 1943-0655
VL - 4
SP - 2066
EP - 2073
JO - IEEE Photonics Journal
JF - IEEE Photonics Journal
IS - 6
ER -