Optimized optical variables of 1.3μm GaInNAs/GaAs quantum well semiconductor laser

S. M. Mitani; M. S. Alias; A. A. Manaf; F. M. Exhsan; A. F A Mat

doi:10.1109/ICP.2010.5604424

Optimized optical variables of 1.3μm GaInNAs/GaAs quantum well semiconductor laser

S. M. Mitani, M. S. Alias, A. A. Manaf, F. M. Exhsan, A. F A Mat

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A quality improvement of the III-V dilute nitride semiconductor alloy, GaInNAs, grown on a GaAs substrate with different aperture sizes and nitrogen contents is reported for 1.31 μm wavelength lasers. It is expected that for GaInNAs, which is lattice matched to InP, band gaps from ≈ 0.3-0.7 eV should be achievable if a few percent of N could be incorporated to the structure. In this communication, we report the influence of nitrogen incorporation on the microstructure of dilute nitride films as well as the influence of the aperture size. The PL spectrum and material optical gain for GaInNAs with different N percentage have been investigated. The LI curve, optical power, wave intensity as well as threshold current for various aperture sizes have been reported.

Original language	English (US)
Title of host publication	2010 International Conference on Photonics, ICP2010
DOIs	https://doi.org/10.1109/ICP.2010.5604424
State	Published - 2010
Externally published	Yes
Event	2010 1st International Conference on Photonics, ICP2010 - Langkawi, Kedah, Malaysia Duration: Jul 5 2010 → Jul 7 2010

Other

Other	2010 1st International Conference on Photonics, ICP2010
Country/Territory	Malaysia
City	Langkawi, Kedah
Period	07/5/10 → 07/7/10

Keywords

GaInNAs
Quantum-well devices
Surface emitting lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICP.2010.5604424

Cite this

@inproceedings{d1bc0a515f844cfcbba5f284caffe256,

title = "Optimized optical variables of 1.3μm GaInNAs/GaAs quantum well semiconductor laser",

abstract = "A quality improvement of the III-V dilute nitride semiconductor alloy, GaInNAs, grown on a GaAs substrate with different aperture sizes and nitrogen contents is reported for 1.31 μm wavelength lasers. It is expected that for GaInNAs, which is lattice matched to InP, band gaps from ≈ 0.3-0.7 eV should be achievable if a few percent of N could be incorporated to the structure. In this communication, we report the influence of nitrogen incorporation on the microstructure of dilute nitride films as well as the influence of the aperture size. The PL spectrum and material optical gain for GaInNAs with different N percentage have been investigated. The LI curve, optical power, wave intensity as well as threshold current for various aperture sizes have been reported.",

keywords = "GaInNAs, Quantum-well devices, Surface emitting lasers",

author = "Mitani, {S. M.} and Alias, {M. S.} and Manaf, {A. A.} and Exhsan, {F. M.} and Mat, {A. F A}",

year = "2010",

doi = "10.1109/ICP.2010.5604424",

language = "English (US)",

isbn = "9781424471874",

booktitle = "2010 International Conference on Photonics, ICP2010",

note = "2010 1st International Conference on Photonics, ICP2010 ; Conference date: 05-07-2010 Through 07-07-2010",

}

TY - GEN

T1 - Optimized optical variables of 1.3μm GaInNAs/GaAs quantum well semiconductor laser

AU - Mitani, S. M.

AU - Alias, M. S.

AU - Manaf, A. A.

AU - Exhsan, F. M.

AU - Mat, A. F A

PY - 2010

Y1 - 2010

N2 - A quality improvement of the III-V dilute nitride semiconductor alloy, GaInNAs, grown on a GaAs substrate with different aperture sizes and nitrogen contents is reported for 1.31 μm wavelength lasers. It is expected that for GaInNAs, which is lattice matched to InP, band gaps from ≈ 0.3-0.7 eV should be achievable if a few percent of N could be incorporated to the structure. In this communication, we report the influence of nitrogen incorporation on the microstructure of dilute nitride films as well as the influence of the aperture size. The PL spectrum and material optical gain for GaInNAs with different N percentage have been investigated. The LI curve, optical power, wave intensity as well as threshold current for various aperture sizes have been reported.

AB - A quality improvement of the III-V dilute nitride semiconductor alloy, GaInNAs, grown on a GaAs substrate with different aperture sizes and nitrogen contents is reported for 1.31 μm wavelength lasers. It is expected that for GaInNAs, which is lattice matched to InP, band gaps from ≈ 0.3-0.7 eV should be achievable if a few percent of N could be incorporated to the structure. In this communication, we report the influence of nitrogen incorporation on the microstructure of dilute nitride films as well as the influence of the aperture size. The PL spectrum and material optical gain for GaInNAs with different N percentage have been investigated. The LI curve, optical power, wave intensity as well as threshold current for various aperture sizes have been reported.

KW - GaInNAs

KW - Quantum-well devices

KW - Surface emitting lasers

UR - http://www.scopus.com/inward/record.url?scp=78349239703&partnerID=8YFLogxK

U2 - 10.1109/ICP.2010.5604424

DO - 10.1109/ICP.2010.5604424

M3 - Conference contribution

AN - SCOPUS:78349239703

SN - 9781424471874

BT - 2010 International Conference on Photonics, ICP2010

T2 - 2010 1st International Conference on Photonics, ICP2010

Y2 - 5 July 2010 through 7 July 2010

ER -

Optimized optical variables of 1.3μm GaInNAs/GaAs quantum well semiconductor laser

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Keywords

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